Slkor IGBTs

Choose IGBTs over MOSFETs when: Operating voltage is above 300-400V DC (IGBTs have lower conduction losses at high voltage)

Current is above 10-20A (IGBTs are more cost-effective at high currents)

Switching frequency is below 50kHz (IGBTs have higher switching losses than MOSFETs)

and Cost is a major factor (IGBTs are typically cheaper than high-voltage MOSFETs for equivalent current). MOSFETs are better for high-frequency applications (>100kHz) and lower voltage (<200V) where their lower switching losses and simpler drive requirements provide advantages.

For motor drives above 1kW and AC input supplies, IGBTs are usually the better choice. Contact our FAE team for detailed comparison based on your specific voltage, current, and frequency requirements.

Field-stop (FS) technology is an advancement over traditional punch-through (PT) and non-punch-through (NPT) IGBT structures. FS IGBTs use a lightly doped n-drift region with a field-stop layer near the collector, combining the low conduction losses of PT IGBTs with the ruggedness of NPT IGBTs. Benefits include: Lower VCE(sat) for reduced conduction losses

Faster switching with lower switching losses

Better safe operating area (SOA) for short-circuit withstand

and Lower tail current for reduced turn-off losses. Slkor's IGBT portfolio uses field-stop technology for optimal performance.

For new designs, always select field-stop IGBTs for best efficiency and ruggedness. Contact our FAE team for detailed technology comparison and selection guidance.

IGBT total losses consist of conduction losses and switching losses. Conduction loss is Pcond = VCE(sat) × IC × D, where D is duty cycle. Use VCE(sat) at operating temperature (typically 1.5x the 25°C value). Switching loss is Psw = (Eon + Eoff) × fsw, where Eon and Eoff are switching energies from the datasheet at your operating current and voltage. For inverter applications, calculate losses at multiple operating points and use the weighted average. Don't forget to include diode losses if using the integrated anti-parallel diode.

Use our online loss calculator for accurate thermal design. Contact our FAE team for thermal modeling and heatsink recommendations.

IGBTs should be driven with +15V for turn-on to achieve the specified low VCE(sat). For turn-off, negative gate voltage of -5V to -8V is strongly recommended. The negative voltage provides several benefits: faster turn-off reducing switching losses

improved noise immunity preventing false turn-on from dv/dt

better short-circuit protection response

and more robust operation in noisy industrial environments. A typical gate drive scheme uses +15V/-8V. If unipolar drive must be used (0V/+15V), ensure the gate-emitter path has very low impedance and consider adding a Miller clamp circuit.

Use a gate driver IC with built-in negative voltage capability or a bootstrap circuit with negative bias. Contact our FAE team for gate driver recommendations and circuit design.

Shoot-through occurs when both high-side and low-side IGBTs conduct simultaneously, causing a short circuit across the DC bus. Prevention methods include: Adequate dead time (typically 1-3μs) inserted between turning off one device and turning on the other

Using gate drivers with built-in dead time generation and interlock protection

Implementing hardware interlocks that prevent simultaneous conduction

Adding current sensing with fast overcurrent shutdown (<2μs)

and Using desaturation detection to detect shoot-through and initiate soft shutdown. The dead time must account for IGBT turn-off delay variations with temperature and manufacturing tolerance.

Start with 2μs dead time and verify with oscilloscope measurements. Contact our FAE team for dead time optimization and protection circuit design.