Slkor SiC Devices

SiC devices offer several key advantages: Higher breakdown voltage with lower on-resistance, enabling reduced conduction losses

3-5x faster switching speeds allowing higher frequency operation and smaller passive components

Better thermal conductivity enabling higher operating temperatures (175°C vs 150°C)

Lower switching losses reducing EMI and improving efficiency by 2-5%

and Zero reverse recovery charge in SiC diodes eliminating switching losses. These benefits make SiC ideal for applications requiring highest efficiency and power density.

For applications where efficiency and power density are critical, SiC devices provide significant benefits. Contact our FAE team for cost-benefit analysis and application guidance.

SiC MOSFETs are used for active switching applications where high-frequency operation and low switching losses are required. They're ideal for primary switches in DC-DC converters, inverters, and PFC circuits. SiC Schottky diodes are used for rectification applications where zero reverse recovery provides significant benefits. They're commonly used as boost diodes in PFC circuits, output rectifiers in LLC converters, and freewheeling diodes in inverters. Many high-efficiency designs use both - SiC MOSFETs for switching and SiC diodes for rectification to maximize efficiency gains.

For maximum efficiency improvement, use both SiC MOSFETs and diodes in your design. Contact our FAE team for topology-specific recommendations.

SiC MOSFETs require different gate drive than silicon MOSFETs or IGBTs. Recommended gate drive voltage is +15V to +20V for turn-on (check datasheet for specific device) and -3V to -5V for turn-off. The threshold voltage is lower than silicon devices (typically 2-3V), making them more susceptible to false turn-on from dv/dt. A negative turn-off voltage is strongly recommended to ensure reliable turn-off and prevent shoot-through. Gate drivers should provide fast rise/fall times (<50ns) to take advantage of SiC's fast switching capability.

Use dedicated SiC gate drivers designed for the specific voltage requirements. Contact our FAE team for gate driver recommendations and circuit design.

SiC devices' fast switching (dv/dt up to 50-100V/ns) can create EMI challenges. Mitigation techniques include: Using gate resistors (5-20Ω) to control switching speed

Minimizing loop inductance in power and gate circuits

Implementing proper snubber circuits

Using shielded inductors and transformers

Careful PCB layout with ground planes

and EMI filtering on input and output. The key is to find the right balance - slowing switching too much negates SiC's efficiency benefits, while too fast creates EMI issues.

Start with moderate gate resistance and optimize based on EMI measurements. Our FAE team can provide layout guidelines and EMI mitigation strategies.

SiC devices typically cost 3-5x more than equivalent silicon devices. However, system-level cost analysis often shows SiC is cost-effective due to: Reduced cooling requirements (smaller heatsinks or no forced air)

Smaller magnetic components due to higher frequency operation

Reduced system size and weight

and Lower energy costs over system lifetime from higher efficiency. For example, a SiC-based EV charger may have 40% higher semiconductor cost but 20% lower system cost due to reduced magnetics and cooling. The payback period depends on application and electricity costs.

Perform system-level cost analysis including magnetics, cooling, and energy savings. Contact our FAE team for system cost modeling assistance.