SLM40N120SIC
1200V SiC MOSFET with 40mΩ on-resistance for high-efficiency EV chargers and solar inverters
Product Overview
Description
SLM40N120SIC is a 1200V silicon carbide MOSFET with ultra-low 40mΩ on-resistance for high-efficiency power conversion.
The device enables switching frequencies up to 100kHz with minimal switching losses, reducing magnetic component size.
Ideal for high-efficiency EV chargers, solar inverters, and industrial power supplies.
Product Series
SLM
Primary Application
EV charger DC-DC stages
Key Features
- Ultra-low 40mΩ on-resistance minimizes conduction losses
- 1200V rating for high-voltage applications
- Zero reverse recovery enables high-frequency operation
- 175°C maximum junction temperature
- Low switching losses for high-frequency designs
- TO-247 package for easy heatsink mounting
Specifications
| Drain-Source Voltage | 1200V |
|---|---|
| Continuous Drain Current | 40A @ 25°C |
| On-Resistance | 40mΩ @ VGS=20V |
| Gate Threshold Voltage | 2.5V - 4.0V |
| Input Capacitance | 1800pF typical |
| Output Capacitance | 120pF typical |
| Operating Temperature | -55°C to +175°C |
| Package | TO-247-3 |
Applications
EV charger DC-DC stages
Battery and charging management
Solar inverter power stages
Renewable energy systems
High-efficiency power supplies
Electronic system design
Motor drives
Motor drive and control systems
Energy storage systems
Renewable energy systems
FAE Expert Insights
"SLM40N120SIC is the latest in SiC MOSFET technology. The 40mΩ on-resistance with 1200V rating provides excellent performance for high-power applications. I've used this part in 10kW EV charger designs achieving >98% efficiency. The fast switching requires careful gate drive design and PCB layout, but the efficiency gains are substantial. Use Kelvin source connection for best switching performance."
High-performance 1200V SiC MOSFET for EV chargers
— David Liu, BeiLuo