Littelfuse Power Semiconductors

Littelfuse offers a comprehensive range of power semiconductors: (1) Power MOSFETs - High-frequency switching devices with low on-resistance for DC-DC converters and motor drives

(2) IGBTs - Insulated Gate Bipolar Transistors for high-power motor control and inverters

(3) Thyristors - Silicon Controlled Rectifiers (SCRs) for phase control and power switching

(4) Rectifiers - Standard and fast-recovery diodes for power supply applications

(5) SiC Devices - Silicon Carbide MOSFETs and diodes for high-efficiency, high-frequency applications. Each product family offers various voltage ratings (from 30V to 1700V), current ratings, and package options to meet specific application requirements.

Browse our power semiconductor product listings to find the right device for your application. Contact our FAE team for assistance with device selection and application design.

Selecting between MOSFET and IGBT depends on your application requirements: (1) Voltage Rating - MOSFETs are typically better for applications under 200V, while IGBTs excel above 400V. Between 200-400V, both can be considered

(2) Switching Frequency - MOSFETs switch faster and are preferred for frequencies above 20kHz. IGBTs are suitable for 2-20kHz range

(3) Power Level - MOSFETs are cost-effective for lower power (< 1kW), while IGBTs are more efficient for higher power (> 5kW)

(4) Conduction Losses - IGBTs have lower conduction losses at high currents due to their bipolar nature

(5) Switching Losses - MOSFETs generally have lower switching losses, especially at high frequencies. For EV traction inverters (high voltage, high power, moderate frequency), IGBTs are typically preferred. For DC-DC converters (lower voltage, high frequency), MOSFETs are usually better. Our FAE team can help analyze your specific requirements.

Use MOSFETs for high-frequency, low-voltage applications. Use IGBTs for high-voltage, high-power, moderate-frequency applications. Contact our FAE team for detailed analysis.