IXGH48N60C3

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600V 48A IGBT with 3.0V VCE(sat) for high-efficiency motor drives and inverters. TO-247 package.

Product Overview

Description

The Littelfuse IXGH48N60C3 is a high-performance 600V IGBT designed for high-efficiency motor drives, inverters, and power conversion applications. With 48A continuous collector current and low 3.0V VCE(sat), this device minimizes conduction losses for improved system efficiency.

The device features optimized switching characteristics with smooth turn-off waveforms, reducing EMI and switching losses. The 600V rating provides excellent margin for 380V AC applications and is ideal for industrial motor drives and EV auxiliary systems.

Packaged in the robust TO-247 package, the IXGH48N60C3 offers excellent thermal performance and is suitable for high-power applications requiring reliable operation. The device is short-circuit rated for 10µs, providing robust fault protection.

Product Series

IXGH Series

Primary Application

Motor drives

Key Features

  • 600V collector-emitter voltage
  • 48A continuous collector current
  • Low 3.0V VCE(sat)
  • 110nC gate charge
  • Short-circuit rated 10µs
  • Smooth switching characteristics
  • TO-247 package
  • RoHS compliant

Specifications

vces 600V
ic 48A
vceSat 3.0V
qg 110nC
vge ±20V
pd 195W
package TO-247
qualification Industrial

Applications

Motor drives

Motor drive and control systems

Inverters

Electronic system design

UPS systems

Electronic system design

Welding equipment

Electronic system design

Induction heating

Electronic system design

EV auxiliary systems

Automotive and EV electronics

Documents & Resources

FAE Expert Insights

M

"The IXGH48N60C3 is a workhorse IGBT that I frequently recommend for 380V AC motor drive applications. The 600V rating provides good margin for industrial bus voltages, and the 48A rating handles most medium-power motor drives (5-15kW range). What I particularly like about this IGBT is the smooth switching - the turn-off waveform is clean without excessive ringing, which helps with EMI compliance. The 3.0V VCE(sat) is competitive for this voltage class, keeping conduction losses reasonable. For thermal design, plan for about 150W dissipation at full current with switching losses. The TO-247 package is standard and easy to work with. One application tip: use negative gate voltage (-5V to -8V) for turn-off to reduce tail current and switching losses. This is especially important at high switching frequencies (>10kHz). The short-circuit withstand time of 10µs provides good protection margin when combined with proper desaturation detection."

Reliable 600V IGBT optimized for motor drives and inverters

— Michael Chen, BeiLuo

Frequently Asked Questions

What is the difference between MOSFET and IGBT?

MOSFETs and IGBTs are both voltage-controlled switching devices but have different characteristics: (1) Structure - MOSFET is unipolar (majority carriers only), while IGBT is bipolar (both majority and minority carriers); (2) Voltage Rating - MOSFETs are typically used below 200V, IGBTs excel above 400V; (3) Conduction Losses - IGBTs have lower conduction losses at high currents due to conductivity modulation; (4) Switching Speed - MOSFETs switch faster, making them better for high-frequency applications (>20kHz); (5) Switching Losses - MOSFETs generally have lower switching losses; (6) Cost - At high voltages (>600V), IGBTs are more cost-effective per ampere. For the IXGH48N60C3 IGBT: use for 380V AC motor drives, inverters, and high-power applications where conduction losses matter more than switching speed. The IGBT's bipolar nature gives it lower VCE(sat) compared to a similar MOSFET, resulting in lower conduction losses at high currents. However, IGBTs have tail current during turn-off, which increases switching losses compared to MOSFETs.

Use IGBTs for high-voltage (>400V), high-power applications with moderate switching frequency (2-20kHz). Use MOSFETs for lower voltage, high-frequency applications.

IGBT vs MOSFET bipolar vs unipolar power switching