IXFN48N50P
500V 48A N-channel Power MOSFET with 0.085Ω on-resistance. TO-247 package for high-power switching applications.
Product Overview
Description
The Littelfuse IXFN48N50P is a high-performance N-channel Power MOSFET featuring 500V drain-source voltage rating and 48A continuous current capability. With ultra-low 0.085Ω on-resistance, this device minimizes conduction losses for high-efficiency power conversion.
Designed for demanding applications such as motor drives, power supplies, and inverters, the IXFN48N50P offers fast switching characteristics and excellent thermal performance. The TO-247 package provides robust mounting and efficient heat dissipation.
The device features high avalanche energy capability and is fully characterized for reliable operation in industrial and automotive environments. Low gate charge (Qg = 63nC) enables fast switching with reduced driver losses.
Product Series
IXFN Series
Primary Application
Motor drives
Key Features
- 500V drain-source voltage rating
- 48A continuous drain current
- Ultra-low 0.085Ω on-resistance
- Low gate charge 63nC
- Fast switching capability
- High avalanche energy rated
- TO-247 package
- RoHS compliant
Specifications
| vds | 500V |
|---|---|
| id | 48A |
| rdsOn | 0.085Ω |
| qg | 63nC |
| vgs | ±30V |
| pd | 480W |
| package | TO-247 |
| qualification | Industrial |
Applications
Motor drives
Motor drive and control systems
Switching power supplies
Electronic system design
DC-DC converters
Power conversion and supply
Inverters
Electronic system design
UPS systems
Electronic system design
Welding equipment
Electronic system design
FAE Expert Insights
"The IXFN48N50P is an excellent choice for 400V bus applications like motor drives and power supplies. The 0.085Ω on-resistance is impressive for a 500V device, keeping conduction losses manageable. I've used this MOSFET in numerous industrial designs, and it consistently delivers reliable performance. One key advantage is the fast switching - with only 63nC gate charge, you can switch this device quickly with modest gate drive current. This is important for high-frequency applications where switching losses dominate. For thermal design, the TO-247 package provides good heat dissipation, but you'll still need adequate heatsinking for high-current applications. I typically recommend this device for motor drives up to 5kW or power supplies up to 3kW. The 500V rating provides good margin for 380V AC rectified bus (approximately 540V DC)."
High-performance 500V MOSFET with ultra-low on-resistance for industrial applications
— David Wang, BeiLuo
Frequently Asked Questions
What gate driver should I use with IXFN48N50P?
For driving the IXFN48N50P Power MOSFET, I recommend using a gate driver with adequate current capability to charge/discharge the 63nC gate charge quickly. The Littelfuse IXDD614SI (14A) or IXDD630CI (30A) are excellent choices. For switching frequencies up to 50kHz, the IXDD614SI provides sufficient drive current with fast switching times. For higher frequencies or parallel MOSFET configurations, the IXDD630CI offers higher current capability. Key considerations: (1) Gate Drive Voltage - Use 12-15V for optimal on-resistance; (2) Gate Resistor - Start with 5-10 ohms and adjust based on switching waveforms; (3) Decoupling - Place 0.1µF and 10µF capacitors close to the driver; (4) Layout - Minimize gate loop inductance for clean switching. The IXFN48N50P's low gate charge makes it easier to drive compared to larger IGBTs, allowing for faster switching with lower driver power dissipation.
Use IXDD614SI for standard applications or IXDD630CI for high-frequency/parallel configurations. Contact our FAE team for gate drive design assistance.