PineSemi SiC MOSFETs | BeiLuo Distributor

About SiC MOSFETs

PineSemi's silicon carbide MOSFETs deliver superior switching performance, low on-resistance, and high-temperature operation for next-generation power electronics.

As an authorized distributor of PineSemi, BeiLuo provides a comprehensive range of SiC MOSFETs products. These products are widely used in industrial control, automotive electronics, consumer electronics, and communication equipment. We offer a complete product line with multiple series to meet various application requirements. All products are genuine and original, backed by professional technical support and comprehensive after-sales service.

Selection Guide: How to Choose the Right SiC MOSFETs

Product List

4 products available

Part Number ↕	Voltage Rating ↕	Rds(on) ↕	Continuous Current ↕	Gate Charge ↕	Switching Energy ↕	Package ↕	Stock Status	Action
PSM1-65R035	650V	35mΩ @ Vgs=18V, Tj=25°C	60A @ Tc=25°C	45nC	Eon=85μJ, Eoff=95μJ @ 400V/20A	TO-247-3	In Stock	View Details
PSM2-120R040	1200V	40mΩ @ Vgs=18V, Tj=25°C	55A @ Tc=25°C	65nC	Eon=120μJ, Eoff=110μJ @ 800V/30A	TO-247-4 (Kelvin source)	In Stock	View Details
PSC2M120K042	25V DC	-	-	-	-	SOP-8	In Stock	View Details
PSC2M120K060	25V DC	-	-	-	-	SOP-8	In Stock	View Details

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Frequently Asked Questions

What are the key advantages of PineSemi SiC MOSFETs over silicon IGBTs?

PineSemi SiC MOSFETs offer significant advantages: 1) Switching losses reduced by 50-80% enabling higher frequency operation

2) No tail current eliminates turn-off losses

3) Lower on-resistance temperature coefficient provides better high-temperature performance

4) Higher switching frequencies (up to 100kHz+) allow smaller magnetics

5) Higher efficiency across load range

6) Better thermal performance with higher junction temperature capability. These advantages translate to system-level benefits including smaller size, lower weight, reduced cooling requirements, and higher overall efficiency. For EV applications, this means extended driving range and faster charging.

Contact our FAE team for detailed technical analysis comparing SiC and IGBT for your specific application.

How do I drive PineSemi SiC MOSFETs properly?

Proper gate drive is critical for SiC MOSFET performance: Gate voltage - use +15V to +20V for turn-on, -3V to -5V for turn-off

Gate resistance - typically 5-20Ω depending on switching speed and EMI requirements

Driver current - ensure adequate source/sink current for fast switching

Isolation - use isolated gate drivers for high-voltage applications

Protection - implement desaturation detection and soft shutdown. PineSemi recommends specific gate driver ICs and provides reference designs. The Kelvin-source connection (available in TO-247-4 package) reduces switching losses by eliminating source inductance effects. Always follow PineSemi's application notes for gate drive design.

What thermal management is required for PineSemi SiC MOSFETs?

Thermal design considerations for SiC MOSFETs: Junction temperature - can operate up to 175°C (Tj max)

Heat sinking - calculate based on Rds(on) at operating temperature and switching losses

Thermal interface - use high-quality thermal grease or pads

PCB design - use thick copper and thermal vias for SMD packages

Operating temperature - account for Rds(on) increase with temperature (lower temp coefficient than silicon). While SiC devices run cooler than silicon for the same losses, proper thermal design is still essential. PineSemi provides thermal models and application notes for thermal design. Simulation tools can help optimize heat sink selection.

Contact our FAE team for thermal design support and simulation assistance.

Can PineSemi SiC MOSFETs be paralleled for higher current?

Yes, PineSemi SiC MOSFETs can be paralleled for higher current capability: Requirements - use devices from same production lot for matched characteristics

Layout - ensure symmetric PCB layout with equal trace lengths and impedances

Gate drive - use individual gate resistors and consider separate gate drivers

Current sharing - positive temperature coefficient of Rds(on) promotes natural current sharing

Protection - implement individual overcurrent protection. Paralleling 2-4 devices is common practice. For higher power, consider using larger single devices or modules instead of many parallel discrete devices. PineSemi offers modules with parallel dies already matched and integrated.

What is the typical gate threshold voltage for PineSemi SiC MOSFETs?

PineSemi SiC MOSFETs typically have gate threshold voltages (Vgs(th)) in the range of 2.5V to 3.5V at 25°C. However, Vgs(th) has a negative temperature coefficient of approximately -10mV/°C, meaning threshold voltage decreases as temperature increases. This characteristic requires careful gate drive design to prevent false turn-on from noise or dv/dt coupling. Recommended gate drive voltages: Turn-on: +15V to +20V (ensures low Rds(on))

Turn-off: -3V to -5V (prevents false turn-on)

Miller plateau voltage: typically 5-8V during switching. Always use negative gate voltage for off-state to ensure noise immunity, especially at high temperatures. PineSemi provides detailed gate charge characteristics in datasheets.