PSM2-120R040
1200V silicon carbide MOSFET with 40mΩ on-resistance, designed for EV traction inverters and high-voltage industrial...
Product Overview
Description
The PSM2-120R040 is a 1200V SiC MOSFET featuring 40mΩ typical on-resistance for high-voltage power conversion applications.
Designed specifically for demanding applications such as EV traction inverters, this device delivers exceptional efficiency and reliability.
Available in both standard TO-247 and Kelvin-source TO-247-4 packages for optimized switching performance.
Product Series
PSM
Primary Application
EV traction inverters
Key Features
- 1200V rating for 800V EV battery systems
- Low on-resistance for high-current applications
- Kelvin-source package for optimal switching
- AEC-Q101 qualified for automotive use
- Excellent avalanche ruggedness
- High dv/dt capability (>50V/ns)
Specifications
| Voltage Rating | 1200V |
|---|---|
| Rds(on) | 40mΩ @ Vgs=18V, Tj=25°C |
| Continuous Current | 55A @ Tc=25°C |
| Package | TO-247-4 (Kelvin source) |
| Gate Charge | 65nC |
| Switching Energy | Eon=120μJ, Eoff=110μJ @ 800V/30A |
Applications
EV traction inverters
Automotive and EV electronics
High-voltage DC-DC converters
Power conversion and supply
Industrial motor drives
Motor drive and control systems
Solar inverters
Renewable energy systems
EV charging stations
Battery and charging management
FAE Expert Insights
"The PSM2-120R040 is specifically designed for 800V EV traction inverters, and it delivers outstanding performance in this demanding application. I've worked with several EV manufacturers evaluating this device, and the results consistently exceed expectations. In a 150kW traction inverter design, these devices achieved 98.5% peak efficiency at 20kHz switching frequency - something impossible with silicon IGBTs. The Kelvin-source package is a game-changer for high-current applications, reducing switching losses by approximately 15% compared to standard 3-pin packages. The AEC-Q101 qualification with full automotive-grade reliability testing gives OEMs confidence for production programs. For any 800V EV powertrain application, this is my top recommendation."
Purpose-built for 800V EV traction inverters with exceptional efficiency
— Li Ming, BeiLuo
Frequently Asked Questions
What makes the Kelvin-source package better for high-current applications?
The Kelvin-source (TO-247-4) package provides a separate source connection for the gate drive circuit: Standard TO-247 - gate drive current flows through main source pin, creating voltage drop across source inductance; Kelvin-source - gate drive has separate pin, eliminating source inductance from gate loop. Benefits: 1) Faster switching - no source inductance feedback slows turn-on; 2) Lower switching losses - typically 10-20% reduction; 3) Better control - gate voltage more accurately controlled; 4) Higher frequency capability - reduced switching times allow higher frequencies. For high-current applications (>30A) or high-frequency switching (>50kHz), the Kelvin-source package is strongly recommended. The improvement is most noticeable in hard-switching applications with high di/dt.
Use Kelvin-source package for high-current or high-frequency applications. Contact us for layout guidelines.
How does the PSM2-120R040 perform in automotive qualification testing?
The PSM2-120R040 has passed full AEC-Q101 qualification testing including: High temperature reverse bias (HTRB) - 1000 hours at 100% rated voltage and 175°C; High temperature gate bias (HTGB) - 1000 hours at maximum Vgs and 175°C; Temperature cycling (TC) - 1000 cycles -55°C to +175°C; High humidity high temperature reverse bias (H3TRB) - 1000 hours at 85°C/85% RH; Intermittent operating life (IOL) - 50,000 cycles at rated current; Electrostatic discharge (ESD) - HBM and CDM testing. All tests passed with zero failures. The device meets Grade 0 requirements for under-hood automotive applications. Full qualification reports and PPAP documentation are available for automotive customers.
Contact us for qualification reports and automotive PPAP documentation.
What is the recommended layout for PSM2-120R040 in traction inverter designs?
PCB layout recommendations for PSM2-120R040 in traction inverters: Minimize parasitic inductance - keep power loops as small as possible; Use laminated busbars for DC link connections to minimize inductance; Gate drive placement - place gate driver close to MOSFET, minimize gate loop area; Kelvin connection - use separate traces for Kelvin source connection, don't connect to power source; Decoupling - place ceramic capacitors close to device for high-frequency decoupling; Thermal vias - use thermal vias under drain pad for SMD versions; Clearance - maintain adequate creepage and clearance for 800V operation. Good layout is critical for achieving datasheet performance and reliable operation. PineSemi provides reference designs and layout guidelines for traction inverter applications.
Contact us for reference designs and layout review services for your traction inverter design.
Can PSM2-120R040 be used in parallel for high-power traction inverters?
Yes, PSM2-120R040 devices can be paralleled for high-power traction inverters: Typical configuration - 2-4 devices per switch position for 150-300kW inverters; Current sharing - positive temperature coefficient of Rds(on) promotes natural current sharing; Symmetry requirements - matched trace lengths and impedances for all parallel devices; Gate drive - individual gate resistors recommended, consider separate drivers for each device; Protection - implement individual desaturation detection for each device. For a 150kW traction inverter, typical configuration uses 2 devices in parallel per switch position (12 devices total for 3-phase bridge). For higher power, consider using lower Rds(on) devices or modules instead of many parallel discrete devices. PineSemi also offers modules with parallel dies already integrated.
Contact us for paralleling guidelines and module alternatives for high-power traction inverters.
What are the EMI considerations when using PSM2-120R040?
EMI considerations for PSM2-120R040 high-speed switching: dv/dt - SiC devices have very fast dv/dt (>50V/ns) which can cause conducted and radiated EMI; di/dt - fast current transitions can induce voltages in parasitic inductances; Gate drive - proper gate resistance selection balances switching speed vs EMI; Layout - minimize loop areas, use proper shielding and filtering; Common mode - fast switching generates common-mode noise requiring filtering. Mitigation strategies: Use appropriate gate resistance (typically 10-20Ω) to control switching speed; Implement proper input and output filters; Use shielded gate drive transformers or optocouplers; Follow good PCB layout practices; Consider using soft-switching topologies where possible. While SiC enables high efficiency, the fast switching requires careful EMI design.
Contact us for EMI design guidelines and filter design recommendations.