PineSemi Products

Selecting the right SiC MOSFET involves several key parameters: 1) Voltage rating - choose Vds rating at least 20% higher than maximum system voltage; 2) Current rating - select based on RMS current with thermal considerations; 3) On-resistance (Rds(on)) - lower is better for conduction losses; 4) Package - consider thermal performance and PCB layout; 5) Gate charge - affects switching losses and driver requirements. For EV traction inverters, 1200V devices are typical. For onboard chargers and DC-DC, 650V devices are common. Contact our FAE team for detailed selection guidance.

Use our SiC MOSFET selection guide or contact FAE for application-specific recommendations.

SiC MOSFETs and IGBTs have different characteristics: SiC MOSFETs offer lower switching losses, higher frequency operation, better high-temperature performance, and no tail current. They're ideal for high-frequency applications above 20kHz. IGBTs have lower conduction losses at high current, lower cost per amp, and mature ecosystem. They're better for lower frequency, high-current applications. PineSemi offers both technologies - choose SiC for EV, solar, and high-frequency applications; choose IGBT for motor drives, welders, and cost-sensitive applications.

Contact our FAE team for detailed comparison and application-specific recommendations.

PineSemi offers various package options: Discrete packages - TO-247, TO-263 (D2PAK), TO-252 (DPAK) for through-hole and surface mount; Advanced packages - TO-247-4 with Kelvin source for improved switching; Modules - standard industrial modules in various configurations; Custom modules - application-specific designs available for high volume. Package selection depends on power level, thermal requirements, and manufacturing process. Higher power applications typically use modules for better thermal performance and lower parasitic inductance.

Contact us for package recommendations based on your power and thermal requirements.