PineSemi SiC Diodes | BeiLuo Distributor

About SiC Diodes

PineSemi's silicon carbide Schottky diodes offer zero reverse recovery and high-temperature operation for efficient power conversion.

As an authorized distributor of PineSemi, BeiLuo provides a comprehensive range of SiC Diodes products. These products are widely used in industrial control, automotive electronics, consumer electronics, and communication equipment. We offer a complete product line with multiple series to meet various application requirements. All products are genuine and original, backed by professional technical support and comprehensive after-sales service.

Selection Guide: How to Choose the Right SiC Diodes

Product List

4 products available

Part Number ↕	Voltage Rating ↕	Current Rating ↕	Forward Voltage ↕	Reverse Recovery ↕	Temperature ↕	Package ↕	Stock Status	Action
PSD1-65H060	650V	60A continuous	1.45V typical @ 60A, 25°C	Zero (Schottky barrier)	-55°C to +175°C	TO-247-2	In Stock	View Details
PSD1-65H040	650V	40A	1.40V @ 40A, 25°C	Zero (Schottky barrier)	-	TO-247	In Stock	View Details
PSD2-120H040	1200V	40A	1.50V @ 40A, 25°C	Zero (Schottky barrier)	-	TO-247	In Stock	View Details
PSD1-65H020	650V	20A	1.35V @ 20A, 25°C	Zero (Schottky barrier)	-	TO-220	In Stock	View Details

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Frequently Asked Questions

What are the advantages of SiC Schottky diodes over silicon diodes?

SiC Schottky diodes offer major advantages: Zero reverse recovery - eliminates switching losses from diode recovery

Fast switching - no reverse recovery time enables higher frequencies

Temperature stability - characteristics remain stable across temperature range

High temperature operation - up to 175°C vs 150°C for silicon

Low EMI - soft switching reduces electromagnetic interference. Comparison with silicon: Silicon PN diodes have significant Qrr (10-100μC) causing switching losses

Silicon Schottky diodes have high leakage at high temperatures

SiC diodes maintain low leakage and stable Vf at high temperatures. Applications benefiting most: PFC circuits, bridgeless topologies, high-frequency converters, motor drives with hard switching. The efficiency improvement often justifies higher cost.

When should I use SiC diodes with IGBTs?

Use SiC diodes with IGBTs when: High-frequency operation - above 20kHz where diode recovery losses become significant

Bridgeless PFC - continuous diode conduction makes recovery critical

Hard-switching inverters - recovery losses affect IGBT turn-on

Efficiency is critical - SiC diodes improve system efficiency by 0.5-1%

EMI reduction - soft switching reduces noise and filtering requirements. Cost-benefit analysis: SiC diodes cost 3-5x more than silicon fast recovery diodes

Break-even depends on operating frequency and power level

Typically justified for: >5kW systems, >20kHz operation, or efficiency-critical applications. Not necessary when: Low frequency operation (<10kHz)

Soft-switching topologies

Cost is primary concern

Silicon fast recovery diodes sufficient. Many designs use SiC diodes only for critical positions (e.g., boost diode in PFC) and silicon elsewhere.

How do I select the right SiC diode current rating?

SiC diode current rating selection: Average forward current - select based on RMS current in application

Surge current - ensure adequate non-repetitive surge capability

Thermal design - consider Rth and cooling for continuous operation. Selection guidelines: PFC applications: Diode current = 1.5-2x output current (due to duty cycle)

Inverter applications: Match to IGBT/switch current rating

Rectifier applications: Based on load current and conduction angle. Example - 10kW PFC at 400V output: Output current = 25A DC

Diode average current at 50% duty cycle = 25A

Select 30-40A rated diode for margin. Temperature derating: Current rating decreases at high temperatures

Use derating curves from datasheet

Design for worst-case operating temperature. PineSemi provides selection guides for common applications.

What is the forward voltage drop of PineSemi SiC diodes?

Forward voltage characteristics of PineSemi SiC diodes: Typical Vf at rated current: 1.3-1.5V (higher than silicon Schottky, lower than silicon PN)

Temperature coefficient: +0.1 to +0.2 mV/°C (positive, unlike silicon)

Low current Vf: Higher than silicon at light loads

High current Vf: More stable than silicon across temperature. Comparison at 25°C, 20A: Silicon fast recovery: 1.0-1.2V

Silicon Schottky: 0.7-0.9V

SiC Schottky: 1.3-1.5V. At 125°C: Silicon fast recovery: 0.9-1.0V

Silicon Schottky: 0.5-0.6V (but high leakage)

SiC Schottky: 1.4-1.6V (stable). While SiC Vf is higher, the zero recovery eliminates switching losses, resulting in net efficiency improvement in high-frequency applications. Conduction losses are offset by elimination of recovery losses.

Can SiC diodes be paralleled for higher current?

Yes, SiC Schottky diodes can be paralleled for higher current: Current sharing - positive temperature coefficient of Vf promotes natural current sharing

Matching - use diodes from same production lot for best matching

Layout - symmetrical layout with equal trace lengths

Thermal - ensure equal thermal resistance to heatsink. Paralleling guidelines: 2-4 diodes in parallel is typical

Current sharing typically within 10% with good layout

No current-sharing resistors needed (unlike silicon diodes)

Individual fusing recommended for protection. Design considerations: Voltage derating - parallel diodes don't increase voltage rating

Thermal design - calculate losses for total current

Switching - paralleling doesn't affect switching characteristics. For very high currents, consider using larger single diodes or module packages instead of many parallel discrete devices.