PSD1-65H060
650V 60A silicon carbide Schottky diode with zero reverse recovery for high-efficiency PFC and rectification applicat...
Product Overview
Description
The PSD1-65H060 is a 650V 60A SiC Schottky diode featuring zero reverse recovery charge and fast switching characteristics.
Designed for high-efficiency power factor correction, boost converters, and high-frequency rectification.
The TO-247 package provides excellent thermal performance and compatibility with standard heatsinks.
Product Series
PSD
Primary Application
PFC boost diodes
Key Features
- Zero reverse recovery charge
- Fast switching with no recovery time
- Temperature-stable characteristics
- Low leakage current
- High surge current capability
- AEC-Q101 qualified
Specifications
| Voltage Rating | 650V |
|---|---|
| Current Rating | 60A continuous |
| Forward Voltage | 1.45V typical @ 60A, 25°C |
| Reverse Recovery | Zero (Schottky barrier) |
| Package | TO-247-2 |
| Temperature | -55°C to +175°C |
Applications
PFC boost diodes
Electronic system design
Solar boost stages
Renewable energy systems
High-frequency rectifiers
Electronic system design
Freewheeling diodes
Electronic system design
DC-DC converters
Power conversion and supply
FAE Expert Insights
"The PSD1-65H060 is my go-to recommendation for high-power PFC applications. I've specified this diode in numerous 10-20kW server power supplies and the performance is consistently excellent. The zero reverse recovery eliminates the switching losses that plague silicon fast recovery diodes at high frequencies. In a recent 15kW titanium-efficiency PSU design, replacing silicon diodes with these SiC devices improved PFC efficiency by 0.8% and eliminated the need for snubber circuits. The 60A rating provides good margin for 30-40A PFC stages, and the TO-247 package makes thermal management straightforward. For high-frequency PFC where efficiency matters, this diode pays for itself in reduced cooling costs."
Excellent choice for high-power PFC with proven efficiency gains
— Zhou Tao, BeiLuo
Frequently Asked Questions
How much efficiency improvement can PSD1-65H060 provide in PFC?
Efficiency improvements with PSD1-65H060 in PFC: Typical improvement: 0.5-1.0% over silicon fast recovery diodes; Higher at high frequencies: up to 1.5% at 100kHz; Depends on operating conditions: Input voltage, output power, switching frequency. Loss comparison at 10kW, 400V output, 50kHz: Silicon fast recovery: 15-20W diode losses (conduction + recovery); SiC Schottky: 8-10W losses (conduction only). The efficiency improvement is most significant in: Bridgeless totem-pole PFC (diode conducts continuously); High-frequency operation (>50kHz); High-voltage input applications (277V AC); Systems targeting 80Plus Titanium or better. Additional benefits: Reduced heatsink requirements; Lower EMI (no recovery spikes); Elimination of snubber circuits; Improved reliability (lower temperature).
Contact us for efficiency calculations and ROI analysis for your PFC design.
What is the surge current capability of PSD1-65H060?
Surge current specifications for PSD1-65H060: Non-repetitive surge current: 300A for 10ms (half-sine wave); Repetitive surge current: 100A peak; Surge capability is important for: Inrush current during startup; Line surge events; Capacitor charging current. The SiC Schottky structure provides good surge capability, though generally lower than silicon PN diodes. For applications with high inrush current: Consider using inrush current limiters (NTC thermistors); Implement soft-start circuits; Size diode with surge margin. The TO-247 package provides good thermal mass to handle short-duration surges. For repetitive surge conditions, ensure average current rating is not exceeded.
Contact us for surge current analysis and protection design recommendations.
How does forward voltage vary with temperature for PSD1-65H060?
Temperature characteristics of PSD1-65H060 forward voltage: At 25°C: 1.45V typical @ 60A; At 100°C: 1.55V typical @ 60A; At 150°C: 1.65V typical @ 60A; Temperature coefficient: +0.15 mV/°C (positive). This positive temperature coefficient is beneficial: Natural current sharing when paralleling diodes; Reduced risk of thermal runaway; Stable operation across temperature range. Comparison with silicon: Silicon PN diodes have negative temperature coefficient (-2 mV/°C); Silicon Schottky have strong negative coefficient; SiC Schottky have slight positive coefficient. For thermal design: Use Vf at maximum operating temperature; Calculate conduction losses at worst-case temperature; The increase in Vf is offset by elimination of recovery losses at high temperatures.
Contact us for thermal design support and loss calculations across temperature range.
Can PSD1-65H060 be used as a freewheeling diode?
Yes, PSD1-65H060 can be used as a freewheeling diode: Advantages: Zero reverse recovery eliminates turn-on losses in switch; Fast switching reduces dead time requirements; Low switching losses enable higher frequencies. Considerations: Forward voltage (1.45V) is higher than silicon Schottky (0.8V); Conduction losses may be higher at low frequencies; Cost is higher than silicon alternatives. Best applications: High-frequency converters (>50kHz); Synchronous rectification replacement; Bridge configurations with hard switching; EV onboard chargers and DC-DC. For low-frequency motor drives (<10kHz), silicon fast recovery diodes may be more cost-effective. The decision depends on operating frequency, efficiency requirements, and cost targets.
Contact us for freewheeling diode selection based on your switching frequency and efficiency requirements.
What is the reverse leakage current of PSD1-65H060?
Reverse leakage characteristics of PSD1-65H060: At 25°C, 650V: < 100μA typical; At 100°C, 650V: < 500μA typical; At 150°C, 650V: < 2mA typical. Leakage current increases with temperature but remains low compared to silicon Schottky diodes. Impact on efficiency: At 650V, 100μA = 0.065W (negligible); At 150°C, 2mA = 1.3W (still small compared to conduction losses). Comparison with silicon: Silicon Schottky: 10-100x higher leakage at high temperatures; Silicon PN: Lower leakage but has recovery losses. The low leakage of SiC diodes is a significant advantage at high temperatures. For high-voltage applications, leakage power remains small compared to switching losses saved.
Contact us for leakage current specifications and high-temperature operation guidelines.