PSM1-65R035
650V silicon carbide MOSFET with 35mΩ on-resistance in TO-247 package, ideal for onboard chargers and DC-DC converters.
Product Overview
Description
The PSM1-65R035 is a 650V SiC MOSFET featuring 35mΩ typical on-resistance at Vgs=18V.
This device delivers exceptional switching performance with total switching energy below 200μJ at 400V/20A.
Housed in industry-standard TO-247 package, it offers drop-in replacement capability for existing designs.
Product Series
PSM
Primary Application
EV onboard chargers
Key Features
- Low on-resistance for reduced conduction losses
- Fast switching with minimal switching losses
- Zero reverse recovery charge in body diode
- High-temperature operation to 175°C
- AEC-Q101 qualified for automotive applications
- Industry-standard TO-247 package
Specifications
| Voltage Rating | 650V |
|---|---|
| Rds(on) | 35mΩ @ Vgs=18V, Tj=25°C |
| Continuous Current | 60A @ Tc=25°C |
| Package | TO-247-3 |
| Gate Charge | 45nC |
| Switching Energy | Eon=85μJ, Eoff=95μJ @ 400V/20A |
Applications
EV onboard chargers
Battery and charging management
DC-DC converters
Power conversion and supply
Solar power optimizers
Renewable energy systems
SMPS power supplies
Power conversion and supply
PFC circuits
Electronic system design
FAE Expert Insights
"The PSM1-65R035 has become my go-to recommendation for 650V SiC applications. I've evaluated this device extensively in EV onboard charger designs and the performance is impressive. The 35mΩ Rds(on) provides excellent efficiency in hard-switching applications, and the switching characteristics are well-balanced for EMI performance. In a recent 11kW OBC design, replacing silicon superjunction MOSFETs with these SiC devices improved full-load efficiency by 1.8% and reduced heatsink volume by 40%. The AEC-Q101 qualification gives automotive customers confidence for production designs. The TO-247 package makes it easy to evaluate and prototype without custom PCBs."
Excellent performance for onboard chargers with proven automotive qualification
— Dr. Zhang Wei, BeiLuo
Frequently Asked Questions
What is the recommended gate drive voltage for PSM1-65R035?
Recommended gate drive voltages for PSM1-65R035: Turn-on voltage: +18V (ensures lowest Rds(on)); Turn-off voltage: -3V to -5V (prevents false turn-on); Gate resistance: 10Ω typical (5-20Ω range depending on switching speed needs). The device is fully enhanced at +15V, but +18V provides margin and lowest on-resistance. Negative gate voltage is strongly recommended for noise immunity, especially at high dv/dt conditions. Gate driver should provide at least 2A source/sink current for fast switching. Always use a gate resistor to limit switching speed and control EMI. For high-frequency applications, consider using Kelvin-source connection (TO-247-4 version) to eliminate source inductance effects.
Contact us for gate driver recommendations and reference designs.
How does Rds(on) vary with temperature for PSM1-65R035?
The PSM1-65R035 exhibits positive temperature coefficient for Rds(on): At 25°C: 35mΩ typical; At 100°C: approximately 50mΩ; At 150°C: approximately 65mΩ. This is about 85% increase from 25°C to 150°C. While this seems significant, it's much better than silicon superjunction MOSFETs which can increase by 150% or more over the same temperature range. For thermal design, use Rds(on) at maximum expected junction temperature to calculate conduction losses. The positive temperature coefficient is beneficial for paralleling devices as it promotes current sharing - devices running hotter will have higher resistance and carry less current.
Contact us for thermal design support and loss calculation tools.
What is the body diode performance of PSM1-65R035?
The PSM1-65R035 includes an intrinsic body diode with these characteristics: Forward voltage: approximately 3.5V at rated current (higher than silicon); Reverse recovery charge (Qrr): essentially zero - this is a key advantage of SiC; Reverse recovery time (trr): very fast, typically <50ns; Continuous diode current: same as MOSFET current rating. The zero reverse recovery makes the body diode suitable for hard-switching applications without external anti-parallel diodes. However, the high forward voltage drop means significant conduction losses when using the body diode. For applications with significant diode conduction time (like bridge configurations), external SiC Schottky diodes are recommended for better efficiency.
Contact us for diode selection and synchronous rectification design guidance.
Can PSM1-65R035 be used in bridge configurations?
Yes, PSM1-65R035 can be used in bridge configurations such as full-bridge inverters and totem-pole PFC: Advantages - zero reverse recovery eliminates switching losses in hard-switched bridges; fast switching enables high-frequency operation; low switching losses reduce heatsink requirements. Considerations - use appropriate dead time to prevent shoot-through; consider external SiC Schottky diodes if diode conduction losses are significant; implement proper gate drive with negative voltage for noise immunity; pay attention to layout to minimize parasitic inductance. For totem-pole PFC, the fast switching and zero Qrr make SiC ideal for the high-frequency leg. For motor drive inverters, SiC enables higher switching frequencies for improved motor performance.
Contact us for bridge configuration design guides and layout recommendations.
What is the short-circuit withstand capability of PSM1-65R035?
The PSM1-65R035 has short-circuit withstand time of approximately 2-3μs at Vds=400V and Vgs=18V. This is shorter than typical IGBTs (10μs) due to the higher current density and smaller die size of SiC devices. For short-circuit protection: Detection - use desaturation detection circuits with typical 1-2μs detection time; Response - gate driver must shut down within 1μs of detection; Soft shutdown - implement soft turn-off to prevent voltage overshoot. The short-circuit capability is sufficient for most applications when proper protection is implemented. Always design protection circuits with margin - target total response time < 2μs. PineSemi provides application notes on short-circuit protection design.
Contact us for short-circuit protection design guidelines and recommended gate drivers.