Proper gate drive design is essential for maximizing Rohm SiC MOSFET performance. This application note covers gate voltage requirements, gate resistor selection, and protection circuit design.

Gate Voltage Requirements: Rohm SiC MOSFETs typically require +18V for turn-on and 0V for turn-off. The recommended gate voltage is +18V/0V for optimal performance. Rohm devices are designed for easy drive with standard gate drivers.

Gate Resistor Selection: The gate resistor (Rg) controls switching speed and EMI. Typical values range from 2Ω to 10Ω. Lower values enable faster switching but increase EMI and voltage overshoot. Higher values reduce EMI but increase switching losses.

Gate Driver Selection: Use isolated gate drivers with at least 2500Vrms isolation. Peak output current should be 5A minimum. Include features such as desaturation detection for robust protection.

PCB Layout Considerations: Minimize gate loop inductance by placing the gate driver close to the MOSFET. Use Kelvin source connection (TO-247-4L) to eliminate source inductance from the gate loop.