Rohm Semiconductor Products

Rohm offers four main product categories: SiC MOSFETs featuring industry-leading trench-gate technology with ultra-low on-resistance; SiC Schottky Barrier Diodes with zero reverse recovery for high-efficiency rectification; IGBTs for high-power industrial applications; and Power Modules integrating multiple SiC devices for complete power solutions. Each category provides comprehensive voltage and current ratings to meet diverse application needs.

Browse our product categories below or contact our FAE team for Selection guidance.

Rohm SiC MOSFET selection criteria: (1) Voltage rating - Choose 650V for 400V systems, 750V for OBC, 1200V for 800V systems, 1700V for high-voltage industrial. (2) Current rating - Select based on RMS current with 50% margin. (3) Rds(on) - Lower for higher efficiency, balance with cost. (4) Package - TO-247 for discrete, modules for high power. (5) Automotive - Select AEC-Q101 qualified for EV. (6) Gate drive - Rohm devices work with standard drivers. (7) Thermal - Consider cooling requirements. Contact BeiLuo FAE for detailed Selection support.

Use Rohm's Selection guide or contact BeiLuo FAE for personalized selection assistance.

Rohm SiC device advantages: (1) Ultra-low Rds(on) - Industry-leading specific on-resistance reduces conduction losses. (2) Trench-gate technology - Proprietary design optimized for performance. (3) Easy gate drive - Compatible with standard 15V/18V drivers. (4) Automotive qualified - Full AEC-Q101 with mass production track record. (5) High reliability - Japanese manufacturing quality. (6) Comprehensive portfolio - MOSFETs, SBDs, modules. (7) Application support - Extensive reference designs and FAE support. Rohm delivers best-in-class performance with ease of use.

Choose Rohm for industry-leading low Rds(on) and proven automotive reliability.