3D NAND Manufacturing Solution

AMEC's Primo SSC-HD system can achieve aspect ratios up to 150:1 for 3D NAND applications. This capability supports current and next-generation 3D NAND devices including 200+ layer stacks. The system maintains straight profiles with minimal bowing even at extreme aspect ratios. Actual achievable aspect ratio depends on the specific material stack, critical dimension, and process requirements. AMEC has demonstrated >100:1 aspect ratios in production at major NAND manufacturers. Contact our FAE team to discuss specific aspect ratio requirements for your application.

Primo SSC-HD supports up to 150:1 aspect ratios. Contact FAE for specific application requirements.

Profile control at high aspect ratios is achieved through multiple techniques: 1) Advanced ICP source design provides independent control of plasma density and ion energy, 2) Pulsed plasma operation enables optimization of sidewall passivation, 3) Optimized gas chemistry balances etching and deposition for profile control, 4) Temperature control manages reaction rates and sidewall properties, 5) Process sequence optimization including soft landing and over-etch steps. AMEC's process development team has extensive experience optimizing profiles for 3D NAND applications. Typical results achieve <2° taper and minimal bowing even at >100:1 aspect ratios.

Multiple techniques ensure profile control at extreme aspect ratios. AMEC has proven production experience.

AMEC etching systems are compatible with various hard mask materials commonly used in 3D NAND: 1) Amorphous carbon - high selectivity and easy removal, 2) Silicon oxide - compatible with standard processes, 3) Silicon nitride - high selectivity for deep etching, 4) Metal hard masks - for extreme selectivity requirements. Selectivity to hard mask depends on the specific process chemistry and conditions. AMEC typically achieves >50:1 selectivity to oxide hard masks and >100:1 to carbon hard masks. Process development optimizes selectivity for the specific hard mask and etch depth requirements. Hard mask removal processes are also available for post-etch cleaning.

AMEC supports various hard mask materials with high selectivity. Process optimized for specific hard mask requirements.

Etch rate typically decreases with increasing aspect ratio due to several factors: 1) Transport limitations - reactants and byproducts must travel deeper into high aspect ratio features, 2) Ion shadowing - ions may be shadowed from reaching the bottom of deep features, 3) Surface area - the bottom surface area decreases relative to sidewall area. AMEC systems mitigate these effects through: 1) High-density plasma sources for better transport, 2) Optimized pressure and flow for reactant delivery, 3) Process optimization for aspect ratio independent etching (ARIE). While some rate reduction is inevitable, AMEC processes maintain reasonable etch rates even at extreme aspect ratios. Productivity is optimized through process and hardware design.

Etch rate decreases with aspect ratio but AMEC processes maintain productivity through optimization.

Process development timeline for new NAND generations: 1) Initial process development - 3-6 months for developing baseline processes for new stack structures, 2) Optimization - 2-4 months for fine-tuning profile control, selectivity, and uniformity, 3) Integration - 2-3 months for integrating with other process steps, 4) Qualification - 3-6 months for production qualification including reliability testing. Total timeline from initial development to production is typically 12-18 months for new NAND generations. AMEC provides process development support throughout this timeline. Early engagement allows AMEC to align equipment development with customer roadmaps.

Typical development timeline 12-18 months for new NAND generations. Early engagement recommended.

AMEC provides comprehensive support for staircase etching including: 1) Process development - optimized recipes for precise step profile control, 2) Endpoint detection - advanced endpoint systems for stopping at correct layers, 3) Profile control - maintaining consistent step profiles across hundreds of steps, 4) Uniformity optimization - ensuring consistent results across the wafer, 5) Chamber matching - critical for high-volume production. Staircase etching requires precise control of etch depth per step and consistent profile across all steps. AMEC's process control capabilities enable the precision required for word line formation. Production-proven processes are available for various NAND architectures.

AMEC provides comprehensive staircase etching support with production-proven processes.