Oriental Semiconductor IGBT Modules

When selecting Oriental IGBT modules, consider these key parameters: Voltage rating (Vces) - choose at least 1.5-2x your DC bus voltage for safety margin

Current rating (Ic) - calculate RMS current including overload conditions and add 20-50% margin

Saturation voltage (Vce(sat)) - lower values reduce conduction losses

Switching losses (Eon, Eoff) - critical for high-frequency applications

Thermal resistance (Rth) - affects heatsink requirements

Short-circuit capability - important for protection design. Also consider package type, isolation voltage, and mechanical dimensions for your specific application requirements.

Document your system voltage, current, and switching frequency requirements, then consult our FAE team for Oriental IGBT module selection assistance.

Half-bridge modules contain two IGBTs in a half-bridge configuration, typically used for building full bridges or three-phase inverters by combining multiple modules. They offer flexibility in circuit design but require external rectifiers and brake circuits. PIM (Power Integrated Module) modules integrate a three-phase rectifier, brake IGBT, and three-phase inverter in a single package, providing a complete converter solution. PIMs simplify design, reduce external connections, and save PCB space, making them ideal for compact drives and appliance motor controls. However, PIMs offer less design flexibility and may not be suitable for applications requiring custom topologies or very high power levels.

Choose PIM modules for compact, standard inverter designs; select half-bridge modules for flexible, high-power, or custom topology applications.

To calculate power losses: Conduction loss = Vce(sat) × Ic × duty cycle

Switching loss = (Eon + Eoff) × switching frequency. Total loss = conduction loss + switching loss. For thermal design: Junction temperature Tj = Ta + (Ptotal × (Rth(j-c) + Rth(c-h) + Rth(h-a))), where Ta is ambient temperature, Rth(j-c) is junction-to-case thermal resistance from datasheet, Rth(c-h) is case-to-heatsink thermal resistance (depends on thermal interface material), and Rth(h-a) is heatsink-to-ambient thermal resistance. Ensure Tj does not exceed maximum rated junction temperature (typically 150°C). Oriental provides thermal models and loss calculation tools to assist with thermal design.

Use Oriental's thermal calculation tools or contact our FAE team for power loss and thermal design assistance.

Proper gate drive is critical for Oriental IGBT module performance and reliability. Key requirements include: Gate voltage - typically +15V for turn-on and -5V to -8V for turn-off to prevent false triggering

Gate resistance (Rg) - affects switching speed and EMI, typically 5-50 ohms depending on module size

Gate current capability - driver must provide sufficient peak current for fast switching

Isolation - use isolated drivers for high-voltage applications, with isolation voltage rating exceeding system voltage

Protection features - include desaturation detection, soft turn-off, and Miller clamp for robust protection. Oriental provides recommended gate driver circuits and can recommend compatible driver ICs for their modules.

Follow Oriental's recommended gate driver design or contact our FAE team for driver circuit optimization.

Yes, Oriental offers automotive-grade IGBT modules specifically designed for EV applications. The OIM-A series modules are AEC-Q101 qualified and feature: High reliability for automotive lifetime requirements (15 years/300,000 km)

Wide operating temperature range (-40°C to 150°C)

High power cycling capability for frequent acceleration/deceleration

Low saturation voltage for high efficiency and extended driving range

Excellent short-circuit ruggedness for fault protection. These modules are used in EV motor drives, onboard chargers, and DC-DC converters. Oriental provides comprehensive automotive qualification documentation including PPAP and full traceability.

Specify Oriental OIM-A series for automotive EV applications. Contact us for automotive qualification documentation.