Micron Technology NAND Flash | BeiLuo Distributor

About NAND Flash

Micron's NAND Flash portfolio includes 3D NAND technology with high-density storage solutions for consumer, enterprise, and embedded applications. Available in TLC and QLC configurations.

As an authorized distributor of Micron Technology, BeiLuo provides a comprehensive range of NAND Flash products. These products are widely used in industrial control, automotive electronics, consumer electronics, and communication equipment. We offer a complete product line with multiple series to meet various application requirements. All products are genuine and original, backed by professional technical support and comprehensive after-sales service.

Selection Guide: How to Choose the Right NAND Flash

Product List

4 products available

Part Number ↕	Density ↕	Cell Type ↕	Interface ↕	Endurance ↕	Performance ↕	Package ↕	Stock Status	Action
MT29F4T08GMLCEJ4-37RES	4Tb (512GB)	TLC (3-bit/cell)	ONFI 4.2 / Toggle 3.0	3,000 P/E cycles	800 MT/s read, 600 MT/s write	BGA-152	In Stock	View Details
MT29F8T08EWLCEM5-TES	8Tb (1TB)	QLC (4-bit/cell)	ONFI 4.2	1,000 P/E cycles	800 MT/s read, 400 MT/s write	BGA-152	In Stock	View Details
MT29F2T08GMLCEJ4-37RES	2Tb (256GB)	TLC	ONFI 4.2	3,000 P/E cycles	800 MT/s read, 600 MT/s write	BGA-132	In Stock	View Details
MT29F1T08GMLCEJ4-37RES	1Tb (128GB)	TLC	ONFI 4.2	3,000 P/E cycles	667 MT/s read, 533 MT/s write	BGA-100	In Stock	View Details

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Frequently Asked Questions

What is the difference between TLC and QLC NAND?

TLC (Triple-Level Cell) stores 3 bits per cell, while QLC (Quad-Level Cell) stores 4 bits per cell. TLC offers better endurance (typically 3,000-10,000 P/E cycles) and faster write performance, making it suitable for mainstream SSDs and performance-critical applications. QLC provides higher density and lower cost per gigabyte but with reduced endurance (typically 1,000-3,000 P/E cycles) and slower write speeds. QLC is ideal for read-intensive workloads, cold storage, and cost-sensitive applications. Micron offers both TLC and QLC NAND to address different market segments.

Choose TLC for performance and endurance. Choose QLC for cost-sensitive, read-intensive applications.

What is 3D NAND and how does it differ from planar NAND?

3D NAND stacks memory cells vertically in multiple layers, while planar NAND arranges cells in a single 2D layer. 3D NAND offers several advantages: higher density (more storage in same area), improved performance, better endurance, and lower cost per bit. Micron's 176-layer and 232-layer 3D NAND technologies enable multi-terabit die capacities. The vertical stacking reduces cell-to-cell interference, improving reliability. 3D NAND has largely replaced planar NAND in modern storage products due to these benefits.

3D NAND is the standard for modern storage. Specify 3D NAND for all new designs.