MT29F4T08GMLCEJ4-37RES
4Tb 3D TLC NAND Flash with 176-layer technology, ONFI 4.2 interface, and industrial temperature range.
Product Overview
Description
The MT29F4T08GMLCEJ4-37RES is a high-density 4Tb (512GB) 3D TLC NAND Flash device built on Micron's 176-layer technology.
This device delivers excellent performance with read speeds up to 800 MT/s and write speeds up to 600 MT/s.
The industrial temperature range (-40°C to +85°C) makes it suitable for embedded and industrial applications.
Product Series
MT
Primary Application
Enterprise SSDs
Key Features
- 176-layer 3D NAND technology
- High-density 4Tb capacity
- Fast read/write performance
- Industrial temperature range
- ONFI 4.2 compatible interface
- Enhanced data reliability
Specifications
| Density | 4Tb (512GB) |
|---|---|
| Cell Type | TLC (3-bit/cell) |
| Interface | ONFI 4.2 / Toggle 3.0 |
| Endurance | 3,000 P/E cycles |
| Performance | 800 MT/s read, 600 MT/s write |
| Temperature Range | -40°C to +85°C (Industrial) |
| Package | BGA-152 |
Applications
Enterprise SSDs
Electronic system design
Industrial storage
Industrial automation and control
Embedded systems
Electronic system design
Data center storage
Electronic system design
Automotive storage
Automotive and EV electronics
FAE Expert Insights
"The MT29F4T08GMLCEJ4-37RES is an excellent choice for high-density storage applications. The 176-layer technology provides exceptional density and performance. I've used this device in several enterprise SSD designs with excellent results. The industrial temperature range is a key advantage for industrial and automotive applications. The ONFI 4.2 interface ensures compatibility with modern controllers. Endurance of 3,000 P/E cycles is suitable for most enterprise workloads. For applications requiring even higher endurance, consider SLC caching or over-provisioning strategies."
High-density 3D TLC NAND for enterprise and industrial storage
— David Chen, BeiLuo
Frequently Asked Questions
What is the endurance of this NAND device?
The MT29F4T08GMLCEJ4-37RES has an endurance rating of 3,000 P/E (Program/Erase) cycles. This is typical for TLC NAND and suitable for most enterprise and industrial applications. For higher endurance requirements, consider implementing SLC caching, over-provisioning, or wear leveling algorithms in your system design. The actual endurance achieved depends on the workload characteristics and how well the system manages write amplification.
3,000 P/E cycles is suitable for most applications. Contact us for endurance modeling specific to your workload.