IXYS Corporation Products

IXYS offers four main power semiconductor product categories: (1) Power MOSFETs - high-voltage and low-voltage MOSFETs for switching applications with industry-leading on-resistance; (2) IGBT Modules - insulated gate bipolar transistors for medium to high power motor drives and power supplies; (3) Power Diodes - fast recovery and standard recovery diodes for rectification, freewheeling, and snubber applications; (4) Thyristors - silicon controlled rectifiers (SCRs) and triacs for phase control and AC power switching. Each category features multiple series optimized for specific voltage, current, and switching requirements.

Review each product category to find the IXYS solution matching your power electronics requirements.

Selecting the right IXYS power semiconductor involves several key considerations: (1) Voltage rating - choose Vds or Vce at least 20-30% higher than maximum operating voltage; (2) Current rating - select continuous current rating based on thermal constraints and peak current requirements; (3) Switching frequency - for high-frequency applications (>100kHz), consider MOSFETs; for lower frequencies, IGBTs may be more efficient; (4) Thermal requirements - evaluate Rth and maximum junction temperature for your cooling solution; (5) Package - select TO-220, TO-247, D2PAK, or modules based on power dissipation and mounting requirements. Contact LiTong FAE for detailed selection guidance and thermal modeling.

Match voltage/current ratings to your application with adequate margins. Contact FAE for thermal analysis and selection support.

IXYS power MOSFETs offer several competitive advantages: (1) Low on-resistance (Rds(on)) - enabling lower conduction losses and higher efficiency; (2) Fast switching speed - reducing switching losses in high-frequency applications; (3) High voltage capability - products available from 40V to 1000V+ for various applications; (4) Robust avalanche capability - many devices rated for unclamped inductive switching; (5) Excellent thermal performance - low thermal resistance packages for effective heat dissipation; (6) Wide product range - from small-signal to high-power devices in various packages. IXYS MOSFETs are particularly strong in high-voltage applications above 500V.

IXYS MOSFETs are ideal for high-voltage, high-frequency switching applications requiring low losses and reliable performance.

IXYS IGBT modules offer significant advantages over discrete IGBTs for higher power applications: (1) Integrated design - modules include IGBT chips, freewheeling diodes, and thermal management in one package; (2) Higher power density - modules can handle hundreds of amps in compact packages; (3) Better thermal performance - direct bond copper (DBC) substrate provides excellent heat spreading; (4) Simplified assembly - reduces component count and assembly time; (5) Improved reliability - factory-tested modules ensure consistent performance. IXYS offers modules in various configurations including half-bridge, full-bridge, and three-phase topologies for motor drives, inverters, and power supplies.

Choose IGBT modules for applications above 50A; discrete IGBTs are suitable for lower current applications.

IXYS fast recovery diodes are optimized for high-frequency power electronics with: (1) Fast reverse recovery time (trr) - typically 25-100ns for minimal switching losses; (2) Low reverse recovery charge (Qrr) - reducing EMI and switching stress on associated devices; (3) Soft recovery characteristics - minimizing voltage overshoots and ringing; (4) High surge current capability - handling inrush currents in power supplies; (5) Wide voltage range - available from 100V to 2000V+ for various applications. These characteristics make IXYS diodes ideal for output rectification in SMPS, freewheeling in motor drives, and snubber applications.

IXYS fast recovery diodes are ideal for high-frequency switching applications requiring minimal reverse recovery losses.