Primo SSC
ICP plasma etching system for silicon and compound semiconductor etching with high aspect ratio capability.
Product Overview
Description
The Primo SSC is AMEC's ICP-based silicon etching system designed for high-performance etching of silicon, polysilicon, and compound semiconductor materials. The inductively coupled plasma source generates high-density plasma for fast etch rates and excellent profile control.
This system excels in applications requiring high aspect ratio etching, including 3D NAND channel holes, DRAM capacitor trenches, and MEMS structures. The advanced ICP source design provides independent control of plasma density and ion energy for process optimization.
The system supports both 200mm and 300mm wafer processing with quick changeover capabilities. Advanced features include pulsed plasma operation for improved selectivity and reduced damage, and comprehensive process monitoring for consistent results.
Product Series
Primo
Primary Application
3D NAND Etching
Key Features
- High efficiency and reliability
- Optimized for industrial applications
- Comprehensive technical support
- Available from stock
Specifications
| Wafer Size | 200mm / 300mm |
|---|---|
| Technology Node | 3nm and above |
| Plasma Source | ICP with dual RF |
| Source RF | 13.56MHz / 2MHz |
| Bias RF | 13.56MHz |
| Aspect Ratio | Up to 100:1 |
| Selectivity | > 50:1 (Si to oxide) |
| Uniformity | < ±5% (3σ) |
Applications
3D NAND Etching
Electronic system design
DRAM Trench Etching
Electronic system design
Gate Etching
Electronic system design
MEMS Fabrication
Electronic system design
Power Device Etching
Electronic system design
FAE Expert Insights
"The Primo SSC is AMEC's flagship silicon etching platform and I have seen it perform exceptionally well in demanding applications. The ICP source design provides the high plasma density needed for deep silicon etching while maintaining excellent profile control. For 3D NAND applications, the system achieves aspect ratios exceeding 50:1 with straight profiles and minimal bowing - this is critical for next-generation memory devices. The pulsed plasma capability is particularly valuable for high-selectivity applications where you need to etch silicon but stop precisely on thin oxide layers. I've worked with customers who achieved selectivity greater than 100:1 using optimized pulsed recipes. The system's flexibility allows it to handle diverse applications from shallow gate etching to deep trench formation. The dual-wafer-size capability is useful for fabs transitioning between wafer sizes or running both sizes for different products. For MEMS applications, the system can achieve the smooth sidewalls and precise dimensional control required for mechanical structures."
High-density ICP source with excellent profile control for deep silicon etching
— Dr. Michael Liu, BeiLuo
Frequently Asked Questions
What makes the Primo SSC suitable for 3D NAND applications?
The Primo SSC is optimized for 3D NAND etching through several key features: 1) High aspect ratio capability - can etch channel holes with aspect ratios exceeding 50:1 while maintaining straight profiles. 2) Profile control - advanced ICP source and bias control enable precise control of etch profile including taper angle and bowing. 3) Selectivity - high selectivity to oxide hard masks enables deep etching without excessive mask erosion. 4) Uniformity - excellent CD uniformity across the wafer ensures consistent device performance. 5) Productivity - high etch rates maintain reasonable throughput despite deep etch requirements. For 3D NAND manufacturing, the system handles both channel hole etching and staircase etching processes. The ability to maintain straight profiles at extreme aspect ratios is critical for device yield and performance.
SSC is ideal for 3D NAND and other high aspect ratio silicon etching applications. Contact FAE for process development support.
How does pulsed plasma operation improve etching performance?
Pulsed plasma operation in the Primo SSC provides several benefits: 1) Improved selectivity - by pulsing the source power, the plasma chemistry can be modified to enhance selectivity to underlying layers. The off-time allows chemical species to interact with the surface differently than continuous plasma. 2) Reduced damage - lower average ion energy during pulsed operation reduces plasma-induced damage to sensitive structures. 3) Better profile control - pulsing can improve anisotropy and reduce bowing in high aspect ratio features. 4) Reduced microtrenching - pulsed operation can reduce trenching effects at feature bottoms. 5) Enhanced polymer deposition - pulsing can optimize polymer formation for sidewall protection. The pulse frequency and duty cycle are adjustable parameters that can be optimized for specific applications. Typical pulse frequencies range from 1kHz to 100kHz depending on process requirements.
Pulsed plasma is valuable for high-selectivity and damage-sensitive applications. Optimize pulse parameters for your specific process.
What are the key considerations for MEMS etching applications?
MEMS etching considerations for Primo SSC: 1) Profile control - MEMS structures often require precise control of sidewall angle for mechanical properties. The SSC's independent control of plasma density and ion energy enables profile tuning. 2) Sidewall smoothness - mechanical structures require smooth sidewalls to reduce friction and wear. Process optimization can achieve mirror-like sidewalls. 3) Notching prevention - electrical isolation of MEMS structures can cause notching at the oxide interface. Process recipes can minimize this effect. 4) High aspect ratios - MEMS often require deep trenches with high aspect ratios. The SSC's ICP source provides the plasma density needed. 5) Release etching - final release etching requires careful control to prevent stiction. The SSC can handle both DRIE and release etching processes. 6) Wafer thinning - some MEMS processes require etching of thinned wafers. The system supports various wafer thicknesses and carrier wafer configurations.
SSC is well-suited for MEMS applications. Work with FAE to develop optimized recipes for your specific MEMS structures.
How does the system handle wafer size transitions?
Primo SSC wafer size flexibility: The system supports both 200mm and 300mm wafers with the following features: 1) Quick changeover - the system can be reconfigured between wafer sizes in approximately 4 hours. 2) Hardware modules - wafer handling components including ESC, focus ring, and chamber liners are modular and can be exchanged. 3) Recipe portability - process recipes can be scaled between wafer sizes with appropriate adjustments for plasma distribution differences. 4) Dual-size capability - some configurations allow processing of both sizes without full changeover. 5) Productivity - 300mm processing provides higher throughput per wafer start. For fabs transitioning from 200mm to 300mm, the SSC provides a smooth migration path. The same process knowledge and recipes can be leveraged across wafer sizes. AMEC provides detailed procedures and training for wafer size changeover.
SSC supports both 200mm and 300mm with quick changeover. Ideal for fabs transitioning between wafer sizes.
What process monitoring capabilities are available?
Primo SSC process monitoring features: 1) Optical emission spectroscopy (OES) - monitors plasma chemistry in real-time for endpoint detection and process monitoring. 2) RF monitoring - tracks RF parameters including reflected power, impedance, and harmonic content for plasma stability assessment. 3) Pressure monitoring - precise chamber pressure measurement for process control. 4) Temperature monitoring - wafer temperature measurement using optical pyrometry or ESC temperature sensors. 5) Video monitoring - chamber cameras for visual inspection during processing. 6) Data logging - comprehensive data collection for SPC analysis and troubleshooting. 7) Fault detection - automated detection of process anomalies and equipment faults. All monitoring data is integrated into the system control software with real-time displays and historical trending capabilities.
Comprehensive monitoring enables precise process control and troubleshooting. Use SPC for process optimization.