Xinleineng IGBT Modules

Xinleineng IGBT modules feature competitive Vce(sat) specifications: 75A 1200V modules typically have 1.7V Vce(sat) at 25C and 2.0V at 125C

150A 1200V modules have 1.65V at 25C and 1.95V at 125C

300A modules achieve 1.6V at 25C. These values are comparable to international brands and result in low conduction losses. The temperature coefficient is positive, ensuring good current sharing when modules are paralleled. For thermal calculations, use the 125C values as they is typical operating conditions.

For applications where conduction losses dominate, select modules with lowest Vce(sat). For high-frequency applications, switching losses become more significant.

Switching losses in IGBT modules consist of turn-on loss (Eon) and turn-off loss (Eoff), measured in mJ per pulse. Xinleineng specifies these values at rated current and 600V DC bus voltage. To calculate average switching loss: Psw = (Eon + Eoff) x fsw, where fsw is switching frequency. For example, a module with Eon=8mJ and Eoff=12mJ at 10kHz switching frequency has Psw = 20mJ x 10kHz = 200W switching loss. Actual losses vary with current, voltage, gate resistance, and temperature. Higher gate resistance reduces EMI but increases switching losses. BeiLuo FAEs can provide detailed loss calculations for your specific operating conditions.

For high-frequency applications above 10kHz, carefully evaluate switching losses and consider SiC modules if total losses are excessive.

Xinleineng IGBT modules feature excellent thermal performance with low junction-to-case thermal resistance. Typical RthJC values are: 0.35C/W for 75A modules, 0.28C/W for 150A modules, and 0.18C/W for 300A modules. These values enable efficient heat dissipation and allow higher current capability with standard heatsinks. When calculating thermal performance, add RthJC to RthCS (case-to-sink, typically 0.1-0.2C/W with thermal grease) and RthSA (sink-to-ambient based on your heatsink). The maximum junction temperature is 150C for continuous operation, with 175C allowed for short overload conditions. Proper thermal design ensures reliable operation and long lifetime.

Contact our FAE team for thermal modeling assistance and heatsink selection guidance based on your operating conditions.

Gate resistor selection balances switching speed against EMI and voltage overshoot. For Xinleineng IGBT modules, typical gate resistor values range from 5 to 22 ohms. Lower values (5-10 ohms) provide faster switching with lower switching losses but generate more EMI and voltage overshoot. Higher values (15-22 ohms) reduce EMI and overshoot but increase switching losses. A good starting point is 10 ohms, then adjust based on oscilloscope measurements. For high-frequency applications (>15kHz), use lower gate resistance to minimize switching losses. For applications with strict EMI requirements, use higher values or add ferrite beads. Always verify gate voltage waveforms with an oscilloscope.

Our FAE team can recommend optimal gate resistor values based on your switching frequency and EMI requirements.

Standard Xinleineng IGBT modules include an NTC temperature sensor for thermal monitoring but require external protection circuits. The NTC thermistor (typically 10k ohm at 25C) allows continuous junction temperature monitoring. For comprehensive protection, external circuits should implement: desaturation detection for short-circuit protection (typically 7-9V threshold), overcurrent protection through current sensors, undervoltage lockout for gate drive (typically 12V threshold), and overtemperature protection using the NTC. Intelligent Power Modules (IPM) integrate these protection functions internally, including active Miller clamp to prevent dv/dt turn-on. Proper protection circuit design is essential for reliable operation.

For simplified protection design, consider Xinleineng IPM modules with integrated protection functions.