SCT2120AF
1200V 20A SiC Schottky Barrier Diode with zero reverse recovery, designed for high-voltage PFC and rectification in 800V EV systems.
Product Overview
Description
The SCT2120AF is a 1200V 20A Silicon Carbide Schottky Barrier Diode featuring zero reverse recovery charge and fast switching characteristics. This device is specifically designed for high-voltage applications including 800V EV systems, high-voltage industrial power supplies, and solar inverters.
The SiC Schottky technology eliminates reverse recovery losses, enabling high-efficiency operation at switching frequencies up to 100kHz and beyond. The 1200V rating provides adequate margin for 800V battery systems and high-voltage DC bus applications.
With its high-voltage capability and excellent switching performance, the SCT2120AF is the ideal choice for next-generation 800V EV onboard chargers, DC-DC converters, and high-voltage industrial power supplies.
Product Series
SCT Series
Primary Application
800V EV onboard chargers
Key Features
- 1200V reverse voltage rating
- 20A continuous forward current
- Zero reverse recovery charge
- Low forward voltage drop (1.45V typical)
- Fast switching with no reverse recovery
- 175°C maximum junction temperature
- AEC-Q101 qualified for automotive
Specifications
| Voltage Rating | 1200V |
|---|---|
| Current Rating | 20A |
| Forward Voltage | 1.45V typical |
| Temperature Range | -40°C to +175°C |
| Package | TO-220AC |
Applications
800V EV onboard chargers
Battery and charging management
High-voltage PFC circuits
Electronic system design
DC-DC converter rectifiers
Power conversion and supply
Solar inverters
Renewable energy systems
High-voltage industrial power supplies
Industrial automation and control
Energy storage systems
Renewable energy systems
FAE Expert Insights
"The SCT2120AF is essential for 800V EV designs. The 1200V rating provides the necessary margin for 800V battery systems, and the 20A rating handles most OBC and DC-DC applications. Like all SiC SBDs, it has zero reverse recovery, which is critical for achieving 97%+ efficiency in OBC designs. I've used this extensively in 800V EV platforms with excellent results. Pair it with SCT3080KL or SCT3040KL MOSFETs for a complete high-efficiency solution. The automotive qualification gives confidence for production designs."
Essential 1200V SiC SBD for 800V EV applications
— David Wang, BeiLuo
Frequently Asked Questions
Why is 1200V rating needed for 800V EV systems?
1200V rating necessity: (1) 800V battery - Nominal voltage, up to 850V max. (2) PFC output - ~900V DC bus. (3) Margin - 1.3x safety margin required. (4) Transients - Voltage spikes during switching. (5) Reliability - Higher voltage rating improves long-term reliability. (6) 650V devices - Insufficient margin for 800V. (7) Industry standard - 1200V is standard for 800V systems. The 1200V rating provides necessary safety margin and reliability.
Always use 1200V devices for 800V EV systems; 650V insufficient.
What is the difference between SCH2080KE and SCT2120AF?
SCH2080KE vs SCT2120AF comparison: (1) Voltage - 650V vs 1200V. (2) Current - Both 20A. (3) Applications - 400V vs 800V systems. (4) Forward drop - 1.35V vs 1.45V. (5) Cost - SCT2120AF higher due to higher voltage. (6) Package - Both TO-220. (7) Selection - SCH2080KE for 400V, SCT2120AF for 800V. Both offer zero reverse recovery and excellent performance in their respective voltage classes.
SCH2080KE for 400V systems; SCT2120AF for 800V systems.
Can SCT2120AF be used for solar inverter applications?
SCT2120AF for solar inverters: (1) Voltage - 1200V ideal for 1000V DC bus systems. (2) Current - 20A suitable for residential inverters. (3) Efficiency - Zero recovery enables 99%+ efficiency. (4) Frequency - Supports high switching frequency. (5) Reliability - Proven in outdoor applications. (6) Parallel - Can parallel for higher power. (7) Cost - Premium pays for itself in energy harvest. Excellent for solar inverter boost stages and rectifiers.
Ideal for 1000V DC bus solar inverters; can parallel for higher power.
What is the temperature coefficient of SCT2120AF?
SCT2120AF temperature characteristics: (1) Forward voltage - Negative tempco (~-1mV/°C). (2) Current sharing - Good for parallel operation. (3) Thermal runaway - Not a concern. (4) High temp operation - Vf decreases, helping balance current. (5) Junction temp - Up to 175°C rated. (6) Derating - Check datasheet curves. (7) Design - Positive tempco simplifies parallel design. The temperature characteristics are favorable for reliable operation.
Negative Vf tempco aids current sharing in parallel configurations.
What is the switching speed of SCT2120AF?
SCT2120AF switching characteristics: (1) Reverse recovery - Zero (no recovery time). (2) Turn-off - Instantaneous (capacitive only). (3) Capacitive charge - Low Qc. (4) Switching losses - Minimal compared to silicon. (5) Frequency - Can operate at 100kHz+. (6) EMI - Reduced due to no recovery current spike. (7) Efficiency - Higher due to no recovery losses. The switching performance is exceptional due to zero reverse recovery.
Zero reverse recovery enables highest switching frequencies with minimal losses.
Is SCT2120AF qualified for automotive production?
SCT2120AF automotive qualification: (1) AEC-Q101 - Fully qualified. (2) Grade 0 - -40°C to +175°C. (3) PPAP - Level 3 available. (4) Field proven - In production EVs. (5) Reliability - Extensive testing data. (6) Traceability - Full lot traceability. (7) Quality - Rohm automotive standards. Fully qualified and proven for automotive production including EV OBC and DC-DC applications.
Fully qualified for automotive production; PPAP available.