SCH2080KE
650V 20A SiC Schottky Barrier Diode with zero reverse recovery, ideal for PFC and output rectification applications.
Product Overview
Description
The SCH2080KE is a 650V 20A Silicon Carbide Schottky Barrier Diode featuring zero reverse recovery charge and fast switching characteristics. This device is designed for high-efficiency power conversion applications including PFC circuits, output rectifiers, and freewheeling diodes.
The SiC Schottky technology eliminates reverse recovery losses, significantly improving efficiency in high-frequency switching applications. The device features low forward voltage drop and excellent thermal performance, enabling compact and efficient power supply designs.
With its 650V rating and 20A current capability, the SCH2080KE is ideal for EV onboard chargers, solar inverters, industrial power supplies, and motor drive applications where efficiency and reliability are critical.
Product Series
SCH Series
Primary Application
PFC boost diodes
Key Features
- 650V reverse voltage rating
- 20A continuous forward current
- Zero reverse recovery charge
- Low forward voltage drop (1.35V typical)
- Fast switching with no reverse recovery
- 175°C maximum junction temperature
- AEC-Q101 qualified for automotive
Specifications
| Voltage Rating | 650V |
|---|---|
| Current Rating | 20A |
| Forward Voltage | 1.35V typical |
| Temperature Range | -40°C to +175°C |
| Package | TO-220AC |
Applications
PFC boost diodes
Electronic system design
Output rectifiers
Electronic system design
Freewheeling diodes
Electronic system design
EV onboard chargers
Battery and charging management
Solar inverters
Renewable energy systems
Industrial power supplies
Industrial automation and control
FAE Expert Insights
"The SCH2080KE is my go-to SiC SBD for 650V applications. The zero reverse recovery is a game-changer for PFC circuits - you eliminate the switching losses associated with silicon diodes. At 20A, it handles most PFC and rectifier applications with ease. The forward drop of 1.35V is competitive, and the thermal performance is excellent. I've used this in numerous EV OBC and solar inverter designs with great results. Pair it with Rohm SiC MOSFETs for the ultimate high-efficiency solution."
Zero reverse recovery enables highest efficiency PFC designs
— Michael Chen, BeiLuo
Frequently Asked Questions
What is reverse recovery and why does SiC SBD eliminate it?
Reverse recovery explained: (1) Silicon diodes - Store charge when forward biased, must discharge when switching off. (2) Recovery time - 50-200ns for silicon fast diodes. (3) Recovery losses - Significant at high frequencies. (4) SiC SBD - Majority carrier device, no charge storage. (5) Zero recovery - Instantaneous switching. (6) Benefits - Higher efficiency, less EMI, faster switching. (7) Applications - Critical for PFC above 50kHz. SiC SBDs eliminate reverse recovery entirely, enabling highest efficiency designs.
Use SiC SBDs for any high-frequency application where efficiency matters.
How do I select the right SiC SBD for my application?
SiC SBD selection criteria: (1) Voltage rating - 1.3x maximum DC bus voltage. (2) Current rating - 1.5x average forward current. (3) Package - TO-220, TO-247 based on thermal needs. (4) Forward drop - Lower is better for conduction losses. (5) Temperature - Check derating curves. (6) Parallel - Can parallel for higher current. (7) Cost - Balance performance vs budget. SCH2080KE is excellent for 650V/20A applications. Contact BeiLuo FAE for selection assistance.
SCH2080KE for 650V/20A; higher voltage/current options available.
What is the forward voltage drop of SCH2080KE?
SCH2080KE forward characteristics: (1) Typical Vf - 1.35V at 20A, 25°C. (2) At 125°C - ~1.25V (negative tempco). (3) At 10A - ~1.25V. (4) Comparison - Similar to silicon ultrafast diodes. (5) Benefit - No reverse recovery losses offset Vf. (6) Total losses - Lower than silicon in most applications. (7) Thermal - Lower losses at high temperature. The forward drop is competitive and the zero recovery makes it superior overall.
Consider total losses (conduction + switching) when comparing to silicon.
Can SCH2080KE be used in parallel for higher current?
SCH2080KE parallel operation: (1) Positive tempco - Good current sharing. (2) Thermal runaway - Not an issue with SiC SBDs. (3) Layout - Symmetrical connections essential. (4) Current sharing - Typically within 10% with good layout. (5) Derating - Use 90% of combined rating. (6) Applications - 40A+ rectifiers. (7) Benefits - Cost-effective for high current. Parallel operation is straightforward due to positive temperature coefficient.
Can parallel 2-3 devices for 40-60A applications.
What is the typical efficiency improvement with SiC SBD vs silicon diode?
Efficiency improvement with SiC SBD: (1) PFC applications - 0.5-1% efficiency gain. (2) Switching frequency - Can increase 2-3x. (3) Loss reduction - Eliminate reverse recovery losses. (4) EMI - Reduced due to soft switching. (5) Heatsink - 20-30% smaller possible. (6) System cost - Often lower total cost. (7) Payback - Immediate in most applications. SiC SBDs provide measurable efficiency and system benefits.
SiC SBDs pay for themselves through efficiency gains and reduced cooling.
Is SCH2080KE suitable for automotive applications?
SCH2080KE automotive qualifications: (1) AEC-Q101 - Full automotive qualification. (2) Grade 0 - -40°C to +175°C. (3) PPAP available - For production approval. (4) Reliability - Proven in EV OBC applications. (5) Screening - 100% screening. (6) Traceability - Full lot traceability. (7) Quality - Japanese manufacturing standards. Fully qualified for automotive including EV onboard chargers and DC-DC converters.
Fully qualified for automotive; ideal for EV OBC and DC-DC applications.