NCE Power MOSFETs | BeiLuo Distributor

About MOSFETs

NCE MOSFETs include Trench MOSFETs for low-voltage applications, Super Junction MOSFETs for high-voltage high-efficiency switching, and SGTMOS for advanced power management.

As an authorized distributor of NCE Power, BeiLuo provides a comprehensive range of MOSFETs products. These products are widely used in industrial control, automotive electronics, consumer electronics, and communication equipment. We offer a complete product line with multiple series to meet various application requirements. All products are genuine and original, backed by professional technical support and comprehensive after-sales service.

Selection Guide: How to Choose the Right MOSFETs

Product List

4 products available

Part Number ↕	Voltage Rating ↕	Current Rating ↕	Temperature Range ↕	Specifications ↕	Package ↕	Stock Status	Action
NCEP60T20	200V	60A	-	[object Object]	TO-220/TO-263	true	View Details
NCE65T540	650V	20A	-	[object Object]	TO-220/TO-220F	true	View Details
NCE60N06	25V DC	1A	-40°C to +85°C	60V N-Channel	SOP-8	In Stock	View Details
NCE60N08	25V DC	1A	-40°C to +85°C	80V N-Channel	SOP-8	In Stock	View Details

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Frequently Asked Questions

How do I choose between Trench and Super Junction MOSFETs?

The choice depends on your voltage requirements: (1) Trench MOSFETs (30V-200V) are ideal for low-voltage high-current applications such as DC-DC converters, motor drives, and battery management systems. They offer very low Rds(on) and fast switching. (2) Super Junction MOSFETs (500V-900V) are designed for high-voltage applications such as AC-DC power supplies, LED drivers, and solar inverters. They provide much lower Rds(on) than conventional planar MOSFETs at high voltages. (3) For applications between 200V-500V, evaluate both technologies based on switching frequency and efficiency requirements. (4) Super Junction devices typically have higher switching speeds but may require more careful gate drive design.

Use Trench MOSFETs for <200V, Super Junction for >500V applications.

What is the difference between SGTMOS and standard Trench MOSFETs?

SGTMOS (Shielded Gate Trench MOSFET) offers several advantages over standard Trench MOSFETs: (1) Lower gate charge (Qg) - the shielded gate structure reduces Miller capacitance, resulting in faster switching and lower gate drive losses. (2) Improved EMI performance - reduced dv/dt during switching reduces electromagnetic interference. (3) Better switching behavior - softer switching transitions reduce voltage overshoot and ringing. (4) Higher efficiency - lower switching losses enable higher switching frequencies or improved efficiency at same frequency. (5) Trade-offs - SGTMOS may have slightly higher Rds(on) than comparable standard Trench devices. (6) Applications - SGTMOS is ideal for high-frequency applications (>100kHz) and noise-sensitive designs.

Choose SGTMOS for high-frequency or EMI-sensitive applications.