FUS1M0120K6
Cost-effective 1200V SiC MOSFET with 60mΩ on-resistance for medium power applications.
Product Overview
Description
The FUS1M0120K6 is a cost-effective SiC MOSFET option with 1200V rating and 60mΩ on-resistance.
Provides SiC benefits at a lower cost point for applications where 30mΩ device is not required. Good for medium power converters and industrial drives.
Features the same fast switching characteristics and high temperature capability as the K3 variant.
Product Series
FUS
Primary Application
Medium power converters
Key Features
- 1200V blocking voltage
- 60mΩ on-resistance
- Cost-effective SiC
- Fast switching
- 175°C max junction
Specifications
| VDSS | 1200V |
|---|---|
| RDS(on) | 60mΩ @ VGS=18V |
| ID | 40A @ Tc=25°C |
| Qg | 55nC typical |
| Qgd | 12nC typical |
| Tj(max) | 175°C |
| Package | TO-247-3 |
Applications
Medium power converters
Power conversion and supply
Industrial drives
Motor drive and control systems
UPS systems
Electronic system design
Power supplies
Electronic system design
FAE Expert Insights
"The FUS1M0120K6 offers good value for SiC technology. The 60mΩ resistance is suitable for many applications where ultimate efficiency is not critical. Good entry point for SiC adoption."
Cost-effective SiC option
— David Wang, BeiLuo
Frequently Asked Questions
When should I choose K6 over K3?
Choose K6 when cost is more important than ultimate efficiency. The K6 provides SiC benefits at lower cost. For applications where every watt of loss matters, choose K3.
K6 for cost-sensitive, K3 for high efficiency.