FUS1M0120K3
High-performance 1200V SiC MOSFET with 30mΩ on-resistance for high-efficiency power conversion.
Product Overview
Description
The FUS1M0120K3 is a high-performance SiC MOSFET from Fusemi, featuring 1200V blocking voltage and 30mΩ typical on-resistance.
This SiC MOSFET enables high-efficiency power conversion with switching frequencies up to 100kHz. Ideal for EV chargers, solar inverters, and server power supplies.
Features include fast switching, low switching losses, and excellent thermal performance. The TO-247-3 package provides good thermal conductivity.
Product Series
FUS
Primary Application
EV chargers
Key Features
- 1200V blocking voltage
- 30mΩ low on-resistance
- Fast switching
- Low switching losses
- 175°C max junction
- TO-247 package
Specifications
| VDSS | 1200V |
|---|---|
| RDS(on) | 30mΩ @ VGS=18V |
| ID | 60A @ Tc=25°C |
| Qg | 85nC typical |
| Qgd | 18nC typical |
| Tj(max) | 175°C |
| Package | TO-247-3 |
Applications
EV chargers
Battery and charging management
Solar inverters
Renewable energy systems
Server power supplies
Electronic system design
Motor drives
Motor drive and control systems
FAE Expert Insights
"The FUS1M0120K3 SiC MOSFET provides excellent performance for high-frequency applications. The 30mΩ on-resistance is competitive with leading SiC devices. I've used this in EV charger designs with excellent efficiency results."
Excellent for high-frequency power conversion
— Michael Chen, BeiLuo
Frequently Asked Questions
What gate voltage is recommended?
Fusemi recommends +18V turn-on and -3V to -5V turn-off for optimal performance. The negative turn-off voltage prevents false turn-on from Miller effect during fast switching.
Use +18V/-3V gate drive for best performance.