Fusemi (Senwei) Products

Browse our comprehensive range of fusemi electronic components. As a core distributor, we provide genuine products with technical support and competitive pricing.

Product Categories

IGBT Modules

Fusemi IGBT modules provide reliable power switching for industrial drives, EV inverters, and solar ...

SWA Series SWM Series SWH Series

MOSFETs

Fusemi MOSFETs provide efficient power switching for applications from 20V to 500V. These silicon MO...

SMT Series SMN Series SML Series

SiC Devices

Fusemi SiC (Silicon Carbide) devices provide high-efficiency power conversion for EV, solar, and ind...

SC Series SiC MOSFET SD Series SiC Diode

Power Modules

Fusemi power modules integrate multiple semiconductors and functions into complete solutions includi...

IPM Series PIM Series

Frequently Asked Questions

What is the difference between IGBT and MOSFET?

IGBT and MOSFET are both power semiconductor switches: MOSFETs are better for <600V applications with fast switching and low switching losses. IGBTs are better for >600V applications with lower conduction losses at high power. For 600V-1700V applications, IGBTs are typically preferred. For <600V, MOSFETs offer better efficiency.

Use MOSFETs for <600V high-efficiency applications. Use IGBTs for >600V high-power applications.

IGBT vs MOSFET semiconductor comparison
How do I select the right IGBT module?

IGBT module selection: 1) Voltage rating - 2-3x maximum DC link voltage; 2) Current rating - 1.5-2x margin for overload; 3) Switching frequency - lower Eoff for high frequency; 4) Package type - standard, dual, or six-pack; 5) Temperature rating - ensure adequate derating.

Select voltage 2-3x system voltage with current margin. Contact our FAE for complex applications.

IGBT selection module sizing
What are SiC advantages over silicon?

SiC advantages: 1) Higher efficiency - lower switching and conduction losses; 2) Higher operating temperatures - junction temps up to 200°C+; 3) Higher breakdown voltage - 10x higher than silicon; 4) Better thermal conductivity; 5) Smaller size - higher power density. SiC is ideal for EV, solar, and high-efficiency applications.

Consider SiC for high-efficiency applications where performance justifies higher cost.

SiC advantages Silicon Carbide
What is the difference between Si MOSFET and SiC MOSFET?

Si MOSFETs operate up to 600V with excellent efficiency at low voltages. SiC MOSFETs operate up to 1700V+ with much lower switching losses and higher temperature capability. SiC has faster switching and lower losses, especially at high frequencies and voltages. SiC costs more but enables smaller, more efficient systems.

Use Si MOSFETs for <600V. Use SiC for >600V or high-frequency high-efficiency applications.

Si vs SiC MOSFET comparison
What package types are available for IGBT modules?

Common IGBT module packages: 1) Standard modules (62mm) - versatile, widely used; 2) Mini modules (34mm) - compact for lower power; 3) PrimePACK - high power with integrated diode; 4) Easy modules - economic compact design; 5) Six-pack modules - integrated inverter for motor control. Package choice depends on power level, cooling, and application requirements.

Choose package based on power level, cooling method, and application. Contact our FAE for guidance.

IGBT package module types