EV Fast Charging Solution
Application
Description
Complete SiC power solution for EV fast charging featuring Wolfspeed C3M SiC MOSFETs and C3D SiC diodes for 99% efficiency.
Core Advantages
Recommended Bill of Materials (BOM)
| Item | Part Number | Description | Quantity | Datasheet |
|---|---|---|---|---|
| 1 | C3M0032120K | 1200V 32mĪ© SiC MOSFET | 12 | š Download |
| 2 | C3D20065H | 650V 20A SiC Diode | 6 | š Download |
| 3 | CGD24HB62P1 | Isolated Gate Driver | 12 | š Download |
Applications
Technical Specifications
Customer Success Stories
Leading EV Charging Network
Automotive |
Challenge
Needed high-efficiency power solution for 350kW ultra-fast charging stations
Solution
Implemented Cree SiC-based power module with C3M0032120K MOSFETs
Results
Achieved 99% efficiency and 40% size reduction compared to IGBT solution
European Charging Infrastructure Provider
Energy |
Challenge
Required bidirectional charging capability for V2G grid services
Solution
Designed bidirectional DC-DC converter using Cree SiC devices
Results
Achieved 98.5% efficiency in bidirectional mode with full CCS compliance
FAE Expert Insights
Dr. Robert Chen
Senior FAE - Automotive
Professional Insights
SiC technology is transformative for EV charging. The C3M0032120K enables switching at 50-100kHz, dramatically reducing magnetic component size. Key design considerations include proper gate drive design with negative turn-off voltage, careful PCB layout for high dv/dt, and thermal management for continuous operation.
Key Takeaways
- SiC enables 50-100kHz switching
- Gate drive design critical
- Thermal management essential