Cree (Wolfspeed) Products

Wolfspeed offers four main product categories: SiC MOSFETs for high-efficiency power switching with industry-leading performance; SiC Schottky Diodes featuring zero reverse recovery for rectification applications; GaN HEMTs for ultra-high-frequency switching up to several MHz; and Power Modules integrating multiple SiC devices for complete power conversion solutions. Each category covers a wide range of voltage and current ratings to meet diverse application requirements from EV powertrains to industrial drives.

Browse our product categories below or contact our FAE team for selection guidance.

SiC vs GaN selection criteria: (1) Power level - SiC preferred for >10kW, GaN for <10kW. (2) Frequency - GaN excels at >500kHz, SiC at 50-200kHz. (3) Voltage - SiC available to 1700V, GaN typically <650V. (4) Applications - SiC for EV, solar, industrial; GaN for telecom, consumer, audio. (5) Cost - GaN lower cost for low power, SiC better value at high power. (6) Maturity - SiC more mature for power applications. (7) Support - Both have excellent design resources. Choose based on your specific power, frequency, and voltage requirements.

Use SiC for high-power EV/industrial; GaN for high-frequency telecom/consumer.

Wolfspeed SiC device advantages: (1) Lowest Rds(on) - Industry-leading specific on-resistance. (2) Highest efficiency - 70-90% lower switching losses than silicon. (3) High temperature - 200°C junction temperature capability. (4) Fast switching - 100kHz+ operation enabled. (5) Ruggedness - Excellent short-circuit and avalanche capability. (6) Reliability - Proven in billions of device-hours in field. (7) Innovation - Continuous technology leadership with Gen 3 and beyond. Wolfspeed invented commercial SiC MOSFET technology and maintains market leadership.

Choose Wolfspeed for highest performance SiC devices with proven reliability.