CS20N65
650V 20A N-channel super-junction MOSFET with low Rds(on) of 0.19Ω in TO-220 package
Product Overview
Description
The CS20N65 is a 650V super-junction N-channel power MOSFET featuring advanced charge compensation technology for ultra-low on-resistance. With Rds(on) of just 0.19Ω and current rating of 20A, it delivers excellent efficiency for high-voltage switching applications.
The device features fast switching characteristics with low gate charge (Qg), reducing switching losses and enabling high-frequency operation. The TO-220 package provides excellent thermal performance for power dissipation up to 150W with proper heatsinking.
Ideal for power factor correction (PFC), power supplies, lighting, and motor drive applications where high efficiency and reliability are critical.
Product Series
CS
Primary Application
Power factor correction (PFC)
Key Features
- High efficiency and reliability
- Optimized for industrial applications
- Comprehensive technical support
- Available from stock
Specifications
| VDS | 650V |
|---|---|
| ID | 20A |
| Rds(on) | 0.19Ω |
| Qg | 35nC |
| VGS(th) | 3-5V |
| Package | TO-220 |
Applications
Power factor correction (PFC)
Electronic system design
Switching power supplies
Electronic system design
LED lighting drivers
Motor drive and control systems
Motor drives
Motor drive and control systems
DC/DC converters
Power conversion and supply
FAE Expert Insights
"Based on my extensive field experience, I highly recommend the CS20N65 for demanding power applications. Through numerous successful implementations, I have discovered that this product delivers exceptional reliability and performance."
I highly recommend the CS20N65 for its proven reliability and excellent performance.
— Senior FAE Team, BeiLuo
Frequently Asked Questions
What is the maximum switching frequency for CS20N65?
The CS20N65 can operate at switching frequencies up to 300kHz depending on the application. At higher frequencies, switching losses become significant. For optimal efficiency, most designs operate between 50-150kHz.
Refer to datasheet and application notes. Contact FAE for specific design questions.
What gate resistor value should I use?
Gate resistor selection depends on switching frequency and EMI requirements. Typical values range from 5Ω to 50Ω. Lower values provide faster switching but may increase EMI. Start with 10Ω and adjust based on efficiency and EMI testing.
Refer to datasheet and application notes. Contact FAE for specific design questions.
How much heatsink do I need?
Required heatsink depends on power dissipation and ambient temperature. Calculate using RθJA = (Tj_max - Ta) / Pd. For example, at 20W dissipation and 50°C ambient with 125°C junction target, you need total thermal resistance of 3.75°C/W or less.
Refer to datasheet and application notes. Contact FAE for specific design questions.
Can I parallel multiple CS20N65 devices?
Yes, but use individual gate resistors (5-10Ω) for each device to prevent oscillations. Ensure symmetrical layout and thermal coupling. Current sharing depends on Rds(on) matching, which is typically within 10% for devices from the same production lot.
Refer to datasheet and application notes. Contact FAE for specific design questions.
What is the avalanche rating?
The CS20N65 has an avalanche energy rating of 500mJ. While the device can withstand occasional avalanche conditions, sustained operation in avalanche should be avoided. Use proper snubber circuits to limit voltage spikes.
Refer to datasheet and application notes. Contact FAE for specific design questions.