CPS Products

MOSFETs are generally preferred for applications below 200V and high switching frequencies due to lower switching losses. IGBTs are better suited for high-voltage (>300V) and high-current applications where conduction losses dominate. For voltages between 200-300V, both technologies may be suitable depending on switching frequency and current requirements.

Consider voltage rating, current rating, switching frequency, and efficiency requirements. MOSFETs for high frequency/low voltage, IGBTs for high voltage/high current.

Planar MOSFETs use a traditional vertical structure suitable for lower voltage applications. Super-junction MOSFETs use a charge compensation structure that significantly reduces Rds(on) for the same die size, offering lower conduction losses for high-voltage applications (>500V). Super-junction devices are ideal for power supplies and lighting applications.

Use planar MOSFETs for cost-sensitive low-voltage applications. Use super-junction MOSFETs for high-voltage applications where efficiency is critical.

Total power dissipation is the sum of conduction losses (Pcond = I² × Rds(on) × D) and switching losses (Psw = 0.5 × V × I × (tr + tf) × fsw). For high-frequency applications, switching losses may dominate. Always include thermal resistance calculations to ensure junction temperature stays within safe limits under worst-case conditions.

Calculate both conduction and switching losses. Verify thermal performance using junction-to-case and case-to-ambient thermal resistances.

Most CPS MOSFETs are fully enhanced at Vgs = 10V. Logic-level devices can operate at Vgs = 4.5V. Using the recommended gate voltage ensures lowest Rds(on) and minimizes conduction losses. Higher gate voltages generally provide better performance but ensure gate voltage ratings are not exceeded.

Use 10V gate drive for standard MOSFETs, 4.5V for logic-level devices. Ensure gate drive circuit can provide sufficient current for fast switching.

When paralleling MOSFETs, use individual gate resistors (typically 1-10Ω) to prevent oscillations. Ensure symmetrical PCB layout with equal trace lengths to each device. Current sharing depends on Rds(on) matching and temperature. Thermal coupling helps improve current sharing. Always verify thermal performance under worst-case conditions.

Use individual gate resistors, symmetrical layout, and thermal coupling. Verify current sharing and thermal performance during testing.