XLN40M120-SiC
Xinleineng XLN40M120-SiC 1200V 40mOhm SiC MOSFET module for high-power applications requiring lowest conduction losses.
Product Overview
Description
The Xinleineng XLN40M120-SiC is a high-current 1200V silicon carbide MOSFET power module featuring ultra-low on-resistance of 40mOhm at 25C. This module can conduct 60-75A continuous current with exceptionally low conduction losses, making it ideal for high-power applications where efficiency is paramount. The 40mOhm resistance is approximately half that of competing 80mOhm modules, resulting in 50% lower conduction losses at equivalent current. Combined with SiC's inherently low switching losses, this module enables system efficiencies above 99% in DC-DC converters and above 98.5% in DC-AC inverters. The module supports switching frequencies up to 100kHz for dramatic reductions in passive component size. Applications include high-power solar inverters (15-30kW), EV fast chargers (50-150kW), and electric vehicle traction inverters.
Product Series
SiC Series
Primary Application
High-Power Inverters, EV Chargers, Traction
Key Features
- Ultra-low 40mOhm on-resistance at 25C
- 1200V voltage rating for high-voltage systems
- 60-75A continuous current capability
- Switching frequency up to 100kHz
- 50% lower conduction losses than 80mOhm devices
- System efficiency up to 99% in DC-DC applications
- Operating temperature up to 175C junction
- EasyPACK package with low parasitic inductance
Specifications
| Drain-Source Voltage (Vds) | 1200V |
|---|---|
| Continuous Drain Current (Id) | 75A @ 25C, 50A @ 100C |
| On-Resistance Rds(on) | 40mOhm @ 25C, 60mOhm @ 100C |
| Gate Threshold Voltage | 2.5V typical |
| Switching Frequency | Up to 100kHz |
| Operating Temperature | -40C to +175C |
| Isolation Voltage | 2500V AC |
| Package | EasyPACK |
| RthJC | 0.35C/W |
Applications
High-power solar inverters (15-30kW)
Renewable energy systems
EV fast charging stations (50-150kW)
Battery and charging management
EV traction inverters
Automotive and EV electronics
High-power DC-DC converters
Power conversion and supply
Energy storage systems
Renewable energy systems
High-frequency welding equipment
Electronic system design
FAE Expert Insights
"The XLN40M120-SiC is a game-changer for high-power applications. I have used this module in 30kW solar inverter designs and achieved 98.8% peak efficiency - the best I have measured in this power class. The 40mOhm on-resistance is genuinely ultra-low; at 50A continuous current, conduction loss is only 100W (50^2 x 0.04), compared to 200W for an 80mOhm device. This 100W savings directly translates to reduced cooling requirements and higher system efficiency. For thermal design, the 0.35C/W RthJC is excellent. At 200W total losses (100W conduction + 100W switching at 50kHz), junction temperature rise is only 70C above case. With a good heatsink maintaining case at 60C, junction stays at 130C - well within the 175C limit. One design tip: with 75A capability, DC link capacitor ripple current is significant - use multiple film capacitors in parallel to handle the 100A+ RMS ripple current."
Ultra-low 40mOhm SiC module enabling 98.8% efficiency in 30kW solar inverters
— Dr. Sarah Liu, BeiLuo
Frequently Asked Questions
What applications benefit most from XLN40M120-SiC's low on-resistance?
Applications with high continuous current benefit most from XLN40M120-SiC's ultra-low 40mOhm resistance: High-power solar inverters (15-30kW) - at 40-60A output current, conduction losses are 64-144W vs 128-288W for 80mOhm devices, saving 64-144W per module. EV fast chargers - continuous high-current operation during charging sessions makes conduction loss reduction critical for thermal management. EV traction inverters - high current during acceleration and continuous operation during cruising benefit from low resistance. High-power DC-DC converters - efficiency above 99% is achievable with proper design. Data center power supplies - 24/7 operation makes efficiency improvements economically valuable. The 50% conduction loss reduction compared to 80mOhm devices directly translates to lower operating costs, reduced cooling requirements, and higher system reliability.
Contact our FAE team for application-specific efficiency analysis and ROI calculations for upgrading to XLN40M120-SiC.
How do I optimize thermal design for XLN40M120-SiC at high current?
At high current (50-75A), thermal design is critical for XLN40M120-SiC: Conduction loss at 60A: Pcond = 60^2 x 0.05 (Rds(on) at 100C) = 180W. Switching loss at 50kHz: approximately 120W. Total losses: 300W. Required heatsink thermal resistance: RthSA = (Tj_max - Ta) / P_total - RthJC = (150C - 40C) / 300W - 0.35C/W = 0.37 - 0.35 = 0.02C/W. This requires liquid cooling or high-performance heat pipe heatsinks with forced air. Practical recommendations: For 60A continuous: Use liquid cooling with cold plate (0.05-0.1C/W) or high-performance heat pipe heatsink with 500+ LFM airflow. For 40A continuous: Standard forced air heatsink with 0.3-0.4C/W thermal resistance is sufficient. Always use high-performance thermal interface material (4+ W/mK) and verify mounting torque (2-4 Nm). Monitor case temperature and limit to 80C maximum for long-term reliability.
Our FAE team can provide detailed thermal modeling and heatsink recommendations for your specific current requirements and cooling constraints.
What are the DC link capacitor requirements for XLN40M120-SiC?
High-current SiC applications require carefully designed DC link capacitors: Ripple current handling - at 60A output with sinusoidal current, DC link capacitors see approximately 30A RMS ripple current per phase. For three-phase inverters with 6 modules, total ripple current can reach 180A RMS. Capacitance sizing - use 50-100uF per amp of DC current; for 100A DC bus, use 5000-10000uF total capacitance. Voltage rating - for 800V DC bus, use 1000V or 1100V rated capacitors for margin. Type selection - use film capacitors (not electrolytic) for high ripple current capability and long life. ESL considerations - with SiC's fast switching (50ns), low ESL (<20nH) is critical to minimize voltage overshoot. Place 1-10uF high-frequency film capacitors right at each module terminals. Layout - use laminated busbars or closely spaced copper planes to minimize inductance between capacitors and modules.
Contact our FAE team for DC link capacitor bank design including ripple current calculations and ESL minimization techniques.
How does XLN40M120-SiC compare to superjunction MOSFETs?
XLN40M120-SiC offers significant advantages over silicon superjunction MOSFETs at 1200V: On-resistance - XLN40M120-SiC: 40mOhm; Best 1200V superjunction: typically 100-150mOhm. SiC provides 2.5-3.75x lower resistance. Switching losses - SiC has no stored charge and switches in 50ns vs 100-200ns for superjunction, reducing switching losses by 50-75%. Temperature stability - SiC Rds(on) increases 1.5x from 25C to 100C; superjunction increases 2-3x over same range. Body diode - SiC MOSFET body diode has high forward drop (3-4V) and is slow; superjunction body diode is also slow but has lower drop. Cost - SiC modules cost 2-3x more than superjunction, but system-level savings in cooling and magnetics often justify the premium. For applications above 20kHz or requiring highest efficiency, SiC is the clear winner. For cost-sensitive, low-frequency applications, superjunction may be adequate.
Our FAE team can provide detailed comparisons including system-level cost analysis for SiC vs superjunction in your specific application.
What are the short-circuit protection requirements for XLN40M120-SiC?
SiC MOSFETs have different short-circuit characteristics than IGBTs and require specific protection: Short-circuit withstand time - SiC MOSFETs typically withstand 2-5us vs 10us for IGBT due to higher current density and smaller die size. Detection speed - protection must detect and respond within 1-2us vs 3-5us for IGBT. Desaturation detection - monitor Vds during on-state; if Vds > 5-7V while gate is high, short circuit is detected. Current limiting - unlike IGBT, SiC does not naturally saturate; consider using current sensors for overcurrent detection in addition to desaturation. Soft shutdown - critical for SiC to prevent voltage overshoots; ramp gate voltage down over 2-5us rather than hard turn-off. Gate clamping - ensure gate voltage never exceeds +/-25V absolute maximum during faults. Protection circuit design should use high-speed comparators with <100ns response time and gate drivers with built-in desaturation detection and soft shutdown features.
Our FAE team can review your protection circuit design and recommend appropriate short-circuit protection schemes for SiC modules.
Can XLN40M120-SiC be used for EV traction inverter applications?
Yes, XLN40M120-SiC is well-suited for EV traction inverters with appropriate system design: Voltage rating - 1200V is suitable for 800V battery systems (typical for modern EVs) with margin for voltage spikes. Current capability - 75A continuous supports 50-75kW traction inverters; parallel modules can achieve 150-300kW. Efficiency - SiC's low losses enable 98%+ inverter efficiency, extending vehicle range by 5-10% compared to IGBT designs. Switching frequency - 20-50kHz operation enables high motor control bandwidth and reduces motor current ripple. Thermal design - EV liquid cooling systems (typically 60-80C coolant) can maintain SiC junction below 125C. Considerations: Use automotive-qualified gate drivers with ISO 26262 functional safety support. Implement redundant protection systems for ASIL compliance. Use film capacitors for DC link (not electrolytic) for 15-year vehicle life. XLN40M120-SiC has been successfully deployed in multiple EV programs.
Contact our FAE team for EV traction inverter design support including safety concept development and thermal management.