UN34N08G
Industrial-grade 8Gb SLC NAND Flash with high endurance and reliability for embedded storage.
Product Overview
Description
The UN34N08G provides 8Gb (1GB) of SLC NAND storage with 100,000 program/erase cycle endurance. The ONFI 3.2 interface ensures compatibility with standard NAND controllers.
With industrial temperature range (-40C to +85C) and 10-year data retention, this device is ideal for industrial SSDs, data loggers, and embedded storage systems.
The device supports advanced features including multi-plane operation, cache programming, and copy-back for enhanced performance. Available in standard TSOP and BGA packages.
Product Series
UN
Primary Application
Industrial SSD
Key Features
- SLC architecture
- 100K endurance
- ONFI 3.2
- Industrial temp
Specifications
| Density | 8Gb (1GB) |
|---|---|
| Cell Type | SLC |
| Interface | ONFI 3.2 (Async/Toggle) |
| Page Size | 4KB + 256B spare |
| Block Size | 256KB + 16KB spare |
| Endurance | 100,000 P/E cycles |
| Data Retention | 10 years |
| Operating Temperature | -40C to +85C |
| Package | TSOP-48, BGA-63 |
Applications
Industrial SSD
Industrial automation and control
Data loggers
Electronic system design
Embedded storage
Electronic system design
Network equipment
Communication and interface
FAE Expert Insights
"The UN34N08G is an excellent choice for industrial storage applications. I have recommended this SLC NAND for numerous industrial SSD and data logger projects. The 100K endurance is genuine - I have verified this in long-term testing. The ONFI 3.2 interface works seamlessly with standard controllers. For industrial applications, I always recommend SLC over MLC for reliability. The industrial temperature grade has proven reliable in harsh environments. Pair this with a good NAND controller with 40-bit ECC for best results. This product offers excellent value compared to international brands while maintaining quality."
Reliable SLC NAND with genuine 100K endurance for industrial applications
— Wang Tao, BeiLuo
Frequently Asked Questions
What is the typical write performance?
The UN34N08G SLC NAND provides excellent write performance: Page program time: 300-800 microseconds typical. Block erase time: 3-5 milliseconds typical. Sequential write throughput: 15-25 MB/s depending on controller. Random write performance depends on block size and wear leveling. For best performance, use cache programming and multi-plane operations. The device supports copy-back for efficient internal data movement.
Use cache programming and multi-plane operations for maximum write performance.
How many spare blocks should I reserve?
Reserve 2-4% of total blocks as spares for bad block management. For 8Gb NAND with 256KB blocks (~4000 blocks), reserve 80-160 spare blocks. This provides adequate replacement capacity for the device lifetime. More spare blocks improve reliability and extend useful life. The spare block pool is managed by the NAND controller. Monitor spare block count through controller status registers.
Reserve 4% spare blocks for high-reliability applications, 2% for standard applications.
What is read disturb and how do I prevent it?
Read disturb occurs when repeated reads to one page affect data in other pages of the same block. This is caused by capacitive coupling in the NAND array. Prevention: 1) Limit reads per block (typically 250K reads). 2) Use read scrubbing - periodically rewrite data after many reads. 3) Spread read operations across blocks. 4) Monitor block read counts. 5) Refresh data periodically. Modern NAND controllers handle read scrubbing automatically.
Use NAND controllers with automatic read scrubbing for applications with high read counts.
Can this NAND be used for automotive applications?
The UN34N08G industrial grade (-40C to +85C) is suitable for some automotive applications. For AEC-Q100 qualified automotive applications, UNISemicon offers automotive-grade versions with extended testing. Automotive-grade parts undergo additional qualification including temperature cycling, EMC testing, and reliability verification. Contact us for automotive-grade NAND recommendations and qualification data.
Contact us for automotive-grade NAND options and qualification support.
What is the power consumption during operation?
Typical power consumption: Active read: 30-50mA. Page program: 40-60mA. Block erase: 40-60mA. Standby: 10-20uA. Power consumption varies with operating frequency, temperature, and voltage. Lower temperatures reduce power consumption. The device supports deep power-down mode for minimal standby current. For battery-powered applications, implement aggressive power management with frequent standby transitions.
Use deep power-down mode for battery applications. Contact us for power analysis.