Starpower Semiconductor SiC Modules

About SiC Modules

Starpower SiC modules feature silicon carbide MOSFETs and Schottky diodes for high-frequency, high-efficiency power conversion. These modules enable system-level benefits including reduced cooling requirements, smaller passive components, and higher power density.

As an authorized distributor of Starpower Semiconductor, BeiLuo provides a comprehensive range of SiC Modules products. These products are widely used in industrial control, automotive electronics, consumer electronics, and communication equipment. We offer a complete product line with multiple series to meet various application requirements. All products are genuine and original, backed by professional technical support and comprehensive after-sales service.

Selection Guide: How to Choose the Right SiC Modules

Product List

4 products available

Part Number ↕	Voltage Rating ↕	Current Rating ↕	Temperature Range ↕	Package ↕	Stock Status	Action
GDS100M12B1	N/A	N/A	N/A	Easy1B	In Stock	View Details
GDS50M12B1	1200V	50A	-	Easy1B	In Stock	View Details
GDS200M12B2	1200V	200A	-	Easy2B	In Stock	View Details
GDS65M12B1	650V	65A	-	Easy1B	In Stock	View Details

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Frequently Asked Questions

What are the advantages of Starpower SiC modules over IGBT modules?

Starpower SiC modules offer significant advantages over IGBT modules: (1) Higher switching frequency - SiC can switch at 50-100kHz vs 10-20kHz for IGBT, enabling smaller filters and magnetics. (2) Lower switching losses - SiC has negligible switching losses, improving efficiency especially at light loads. (3) Lower conduction losses - SiC MOSFETs have lower RDS(on) temperature coefficient. (4) No tail current - SiC MOSFETs have no tail current during turn-off, reducing switching losses. (5) Higher efficiency - typically 1-3% higher system efficiency. (6) Reduced cooling - lower losses mean smaller heatsinks and cooling systems. The trade-off is higher cost, but system-level savings often justify the premium.

Contact our FAE team for SiC vs IGBT comparison and application-specific recommendations.

What gate drive requirements do Starpower SiC modules have?

Starpower SiC modules have specific gate drive requirements: (1) Gate voltage - typically +15V to +18V for turn-on and -3V to -5V for turn-off. The negative turn-off voltage is important to prevent false turn-on due to high dv/dt. (2) Gate resistance - lower than IGBT, typically 5-15Ω, to achieve fast switching. (3) Gate driver capability - 5-10A peak current for fast charging/discharging of gate capacitance. (4) Isolation - reinforced isolation required due to high dv/dt (up to 100V/ns). (5) Protection - active Miller clamp recommended for high dv/dt immunity. Starpower provides recommended gate driver ICs and reference circuits for their SiC modules.

Contact our FAE team for gate driver recommendations and circuit design guidelines.

What applications benefit most from Starpower SiC modules?

Applications that benefit most from Starpower SiC modules include: (1) EV charging - high-frequency operation enables compact designs for DC fast chargers. (2) Solar inverters - higher switching frequency reduces filter size and weight. (3) High-frequency power supplies - enables MHz-level switching for ultra-compact designs. (4) Automotive DC-DC converters - high efficiency and power density for onboard converters. (5) Industrial drives - higher switching frequency reduces motor current ripple and audible noise. (6) Energy storage systems - bidirectional operation with high efficiency. The key criteria are applications where switching frequency, efficiency, or power density is critical.

Contact our FAE team for application suitability assessment and ROI analysis.