GDS200M12B2
1200V 200A SiC MOSFET module with 6mΩ RDS(on), ideal for high-power EV charging and industrial drives.
Product Overview
Description
1200V 200A SiC MOSFET module with 6mΩ RDS(on). Silicon carbide technology for ultra-fast switching.
Easy2B package with integrated NTC and low parasitic inductance. Supports switching up to 100kHz.
In stock for high-power EV charging and industrial applications. FAE support for gate drive and thermal design.
Product Series
1200V SiC
Primary Application
Key Features
- Silicon carbide MOSFET with 6mΩ RDS(on) at 25°C
- Zero reverse recovery charge with SiC Schottky diode
- High switching frequency: up to 100kHz
- Low switching losses for high efficiency
- Easy2B package with RthJC = 0.25K/W
- Integrated NTC temperature sensor
Specifications
| Voltage | 1200V |
|---|---|
| Current | 200A |
| Rds On | 6mΩ |
| Switching Frequency | 100kHz |
| Package | Easy2B |
| Stock | In Stock |
| Slug | gds200m12b2 |
Applications
High-power EV charging stations
Industrial application for
Industrial motor drives
Industrial application for
Solar inverters
Industrial application for
Energy storage systems
Industrial application for
High-frequency power supplies
Industrial application for
FAE Expert Insights
"GDS200M12B2 is Starpower's high-current SiC module offering, delivering exceptional performance for demanding high-power applications. The 6mΩ RDS(on) provides excellent efficiency, and the Easy2B package handles the thermal requirements well. Customers in EV charging and industrial drives report significant system-level benefits including reduced cooling requirements and smaller passive components. The module's reliability has been proven in numerous field installations."
Excellent for high-power applications
— Senior FAE, BeiLuo
Frequently Asked Questions
What is the recommended gate drive voltage for GDS200M12B2?
GDS200M12B2 is optimized for +18V turn-on and -3V to -5V turn-off gate drive: (1) +18V VGS(on) ensures low RDS(on) and minimizes conduction losses. (2) Negative turn-off voltage (-3V to -5V) is critical to prevent false turn-on due to high dv/dt. (3) Gate resistor selection affects switching speed and EMI - typical values are 3-8Ω for both turn-on and turn-off. (4) The gate drive should provide 8-15A peak current for fast switching of the larger die. (5) Active Miller clamp is recommended for high dv/dt immunity. The larger die requires more gate charge than GDS100M12B1.
Contact our FAE team for SiC gate driver IC recommendations and circuit design.
What is the thermal resistance of GDS200M12B2?
GDS200M12B2 in Easy2B package has the following thermal characteristics: (1) Junction-to-case thermal resistance RthJC = 0.25K/W. (2) Maximum junction temperature Tj(max) = 175°C. (3) Recommended operating junction temperature Tj(op) = -40°C to +150°C. For continuous operation at 200A with 6mΩ RDS(on), the conduction loss is 240W at 150°C. This requires a heatsink with thermal resistance of approximately 0.2K/W or better to maintain junction temperature below 150°C at 40°C ambient. Forced air cooling or liquid cooling is typically required for continuous operation at full current.
Contact our FAE team for thermal simulation and cooling system design.
Can GDS200M12B2 be used for high-power EV charging applications?
Yes, GDS200M12B2 is ideal for high-power EV charging applications. Its characteristics make it perfect for this demanding application: (1) 1200V rating supports 800V battery systems and 1000V DC bus. (2) 200A current rating supports DC fast chargers up to 200-300kW. (3) 100kHz switching enables compact magnetic components and filters. (4) High efficiency (>98.5%) reduces cooling requirements. (5) Bidirectional capability supports V2G applications. (6) High reliability for 24/7 operation. The Easy2B package is designed for high-power applications with excellent thermal performance.
Contact our FAE team for high-power EV charger design support and topology recommendations.
What is the switching performance of GDS200M12B2 compared to IGBT?
GDS200M12B2 offers dramatically superior switching performance compared to equivalent IGBT: (1) Switching frequency - up to 100kHz vs 10-20kHz for IGBT. (2) Turn-on time - typically 60ns vs 300-600ns for IGBT. (3) Turn-off time - typically 40ns vs 400-1000ns for IGBT (including tail). (4) Switching losses - approximately 1/8th of equivalent IGBT at same frequency. (5) dv/dt - up to 100V/ns vs 5-10V/ns for IGBT. This enables dramatic reductions in passive component size and weight. However, the high dv/dt requires careful PCB layout and EMI filtering design.
Contact our FAE team for switching performance analysis and EMI mitigation strategies.
How does GDS200M12B2 compare to GDS100M12B1?
GDS200M12B2 and GDS100M12B1 serve different current levels: (1) GDS200M12B2 (200A, 6mΩ, Easy2B) is designed for high-power applications (50-150kW) with lower RDS(on) but larger package. (2) GDS100M12B1 (100A, 12mΩ, Easy1B) is for medium power applications (25-75kW) with more compact package. GDS200M12B2 has lower conduction losses but higher gate charge. The Easy2B package has better thermal performance (0.25K/W vs 0.4K/W). Selection depends on current requirements, cooling capabilities, and space constraints. Both feature the same 1200V rating and excellent switching performance.
Contact our FAE team for SiC module selection based on your specific power and efficiency requirements.
What are the parallel operation considerations for GDS200M12B2?
GDS200M12B2 can be paralleled for higher current applications: (1) Positive temperature coefficient of RDS(on) promotes current sharing. (2) Matched devices from same production lot recommended for best sharing. (3) Symmetrical layout essential for equal current distribution. (4) Individual gate resistors for each module recommended. (5) Common heatsink ensures thermal coupling. (6) Current derating of 10-15% typically required for parallel operation. Two GDS200M12B2 modules can support applications up to 350-400A. Starpower provides paralleling guidelines and layout recommendations.
Contact our FAE team for parallel operation design support and current sharing analysis.