EV Charging Power Solution
Application
Description
High-efficiency power semiconductor solution for Level 2 and DC fast charging stations with SiC and IGBT technology.
Core Advantages
Recommended Bill of Materials (BOM)
| Item | Part Number | Description | Quantity | Datasheet |
|---|---|---|---|---|
| 1 | SKM600GB12T4 | High-power IGBT module for PFC and inverter stages | 📄 Download | |
| 2 | SKM100N120SIC | SiC MOSFET for high-frequency DC-DC conversion | 📄 Download | |
| 3 | SKM200GB12T4 | IGBT module for medium-power charging modules | 📄 Download | |
| 4 | SKM100N60MOS | Low-voltage MOSFET for auxiliary power supplies | 📄 Download |
Applications
Technical Specifications
Customer Success Stories
ChargeTech Solutions
EV Charging Infrastructure | 150kW DC Fast Charging Station
Challenge
The customer needed a high-efficiency power solution for 150kW DC fast charging stations deployed across highway corridors. The system required 98%+ efficiency to minimize operating costs, wide output voltage range (200-1000V) to support all EV models, and high reliability for 24/7 operation in harsh outdoor environments.
Solution
We provided a complete power semiconductor solution using SiC MOSFETs for the DC-DC stage and IGBTs for the PFC stage. The SiC devices enabled 50kHz switching frequency, reducing magnetic component size by 40%. Advanced thermal management with liquid cooling ensured reliable operation at 50°C ambient.
Results
The charging station achieved 98.5% peak efficiency, reducing power losses by 30% compared to silicon-only designs. The compact design enabled installation in space-constrained highway locations. Field reliability exceeded 99.5% uptime over two years of operation.
FAE Expert Insights
Dr. Thomas Weber
Senior FAE - Power Systems
15 years
Professional Insights
Key considerations: SiC technology is essential for >98% efficiency; Gate drive design critical for SiC reliability; Thermal management limits maximum power capability; EMI filtering challenging with high dv/dt SiC devices; Bi-directional operation requires additional protection. Common pitfalls to avoid: Insufficient negative gate voltage for SiC turn-off; Inadequate thermal design for continuous operation; Missing protection for bi-directional power flow; Insufficient EMI filtering for regulatory compliance; Poor layout causing parasitic oscillations.
Key Takeaways
- SiC technology is essential for >98% efficiency
- Gate drive design critical for SiC reliability
- Thermal management limits maximum power capability
- EMI filtering challenging with high dv/dt SiC devices
- Bi-directional operation requires additional protection
Decision Framework
Decision Framework
Steps:
- Determine power level and voltage requirements
- Select appropriate device technology
- Design gate drive and protection
- Plan thermal management strategy
- Validate efficiency and reliability