OSiC60M120
High-current 60A 1200V SiC MOSFET for high-power inverters and EV charging.
Product Overview
Description
The OSiC60M120 is a high-current 1200V SiC MOSFET designed for demanding high-power applications.
With RDS(on) of 60m ohm and 60A continuous current capability, this device delivers exceptional performance for high-power inverters and EV charging systems.
The device features low gate charge and fast switching, enabling high-frequency operation with reduced cooling requirements.
Product Series
OSiC
Primary Application
High-power solar inverters
Key Features
- 60A high current capability
- Ultra-low RDS(on) of 60m ohm
- Fast switching for high frequency
- 175°C maximum junction temperature
- Kelvin source connection
- Low gate charge
Specifications
| Voltage Rating | 1200V |
|---|---|
| Current Rating | 60A |
| RDS(on) | 60m ohm (typ) |
| Package | TO-247-4 |
| Temperature | 175°C (max) |
| Temperature Range | -55°C to +175°C |
Applications
High-power solar inverters
Renewable energy systems
EV charging stations
Battery and charging management
Industrial motor drives
Motor drive and control systems
Energy storage systems
Renewable energy systems
FAE Expert Insights
"The OSiC60M120 is an excellent choice for high-power applications requiring maximum efficiency. The 60A rating provides substantial headroom for 50-100kW solar inverters and 150kW+ EV chargers. In my experience, this device delivers consistent performance even under demanding thermal conditions. The TO-247-4 package with Kelvin source connection is essential for minimizing switching losses. For designers transitioning from IGBTs to SiC, this device offers a compelling combination of performance and ease of use. The 175°C rating provides excellent design margin for outdoor installations."
High-current SiC MOSFET for demanding power applications
— Dr. James Chen, BeiLuo