OSiC40M120
High-performance 40A 1200V SiC MOSFET for EV chargers and high-efficiency inverters.
Product Overview
Description
The OSiC40M120 is a 1200V SiC MOSFET featuring ultra-low switching losses and high-temperature capability for next-generation power systems.
With RDS(on) of 80m ohm and switching speeds 10x faster than IGBTs, this device enables high-frequency operation with reduced cooling requirements.
The device is ideal for EV onboard chargers, solar inverters, and high-density power supplies requiring maximum efficiency.
Product Series
OSiC
Primary Application
EV onboard chargers
Key Features
- Ultra-low switching losses
- High-temperature operation to 175°C
- Fast switching speed
- Zero reverse recovery charge
- Low gate charge
- Kelvin source connection (TO-247-4)
Specifications
| Voltage Rating | 1200V |
|---|---|
| Current Rating | 40A |
| RDS(on) | 80m ohm (typ) |
| Package | TO-247-4 |
| Temperature | 175°C (max) |
Applications
EV onboard chargers
Battery and charging management
Solar inverters
Renewable energy systems
High-density SMPS
Power conversion and supply
Motor drives
Motor drive and control systems
FAE Expert Insights
"The OSiC40M120 is excellent value in the SiC MOSFET market. In EV onboard charger applications, I've measured efficiency improvements of 2-3% compared to IGBT solutions, which translates to significant energy savings and reduced cooling requirements. The Kelvin source connection in the TO-247-4 package is crucial for minimizing switching losses by isolating the gate drive loop from the power loop. For solar inverters, this device enables switching frequencies of 50-100kHz, allowing dramatic reduction in magnetic component size. The 175°C rating provides excellent design margin. While the initial cost is higher than IGBTs, the system-level benefits often justify the investment."
Excellent SiC solution for EV and solar applications with system-level efficiency benefits
— Dr. Robert Li, BeiLuo
Frequently Asked Questions
What gate driver requirements are specific to SiC MOSFETs?
SiC MOSFETs require special gate driver considerations due to their fast switching speed. Key requirements include: Higher gate voltage - typically +15V to +20V for turn-on (vs +15V for IGBTs) and -3V to -5V for turn-off to ensure reliable switching; Lower gate resistance - typically 1-5 ohms to achieve fast switching (but watch for EMI); Higher peak current capability - drivers must supply 2-5A peak current for fast charging of gate capacitance; Isolation - use isolated drivers with high CMTI (Common Mode Transient Immunity) of 50-100kV/us minimum; Undervoltage lockout - ensure adequate Vgs before switching to prevent excessive RDS(on). Oriental recommends dedicated SiC gate drivers designed for these requirements.
Use dedicated SiC gate drivers with adequate voltage range, low Rg, and high CMTI.
What is the recommended soldering profile for OSiC40M120?
Standard reflow soldering profile per JEDEC J-STD-020 is recommended. Peak temperature should not exceed 260°C for Pb-free solder. Preheat at 150-180°C for 60-90 seconds. Soak at 217°C for 60-90 seconds. Peak at 245-260°C for 20-40 seconds. Allow adequate cooling time. Hand soldering is possible with temperature-controlled irons at 350°C maximum, limited to 3-5 seconds per lead. Avoid thermal shock by not exceeding 4°C/second heating/cooling rates.
Use standard Pb-free reflow profile. Contact us for specific soldering recommendations.
What is the MTBF of OSiC40M120?
The OSiC40M120 has an MTBF (Mean Time Between Failures) of >100 million hours at 25°C operating temperature, calculated per Telcordia SR-332. This corresponds to a FIT rate of <10 failures per billion device-hours. Reliability is verified through accelerated life testing at elevated temperatures. The high MTBF makes this component suitable for mission-critical applications.
Suitable for high-reliability applications. Contact us for detailed reliability reports.
What is the ESD sensitivity rating of OSiC40M120?
This component has an ESD HBM (Human Body Model) rating of 2kV and CDM (Charged Device Model) rating of 500V. While this provides reasonable protection, standard ESD precautions should always be followed during handling and assembly. Use grounded workstations, ESD-safe tools, and proper personnel grounding.
Use standard ESD precautions. Contact us for high-ESD environment recommendations.
What is the lead time for OSiC40M120?
Standard lead time for Oriental products is 4-6 weeks for production quantities. Samples are typically available from stock with 1-2 week lead time. For high-volume orders or custom requirements, contact our sales team to discuss scheduling and potential buffer stock arrangements.
Contact our sales team for current lead times and availability.