QA-R4G0315T

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3W reinforced isolation DC/DC for SiC MOSFETs with 6000V isolation, 100kV/us CMTI, +15V/-4V output.

Product Overview

Description

The QA-R4G0315T is a 3W reinforced isolation DC/DC converter specifically designed for SiC MOSFET gate driver applications. It features 6000VDC reinforced isolation, dual outputs (+15V/-4V) optimized for SiC gate drive, and very low isolation capacitance of 10pF typical. The high CMTI rating of 100kV/us makes it ideal for high-speed SiC switching applications.

Product Series

QA-R Series

Primary Application

SiC MOSFET gate driver power supply

Key Features

  • 6000VDC reinforced isolation
  • 2000VDC continuous working voltage
  • Dual output +15V/-4V for SiC gate drive
  • Ultra-low isolation capacitance 10pF
  • Very high CMTI 100kV/us
  • Wide operating temperature -40°C to +105°C
  • SiC MOSFET optimized
  • UL 61800-5-1 certified for motor drives

Specifications

Input Voltage 4.5-5.5VDC (5V nominal)
Output Power 3W
Output Voltage +15V/-4V (dual output)
Output Current +100mA/-100mA
Isolation Voltage 6000VDC reinforced
Working Voltage 2000VDC continuous
Isolation Capacitance 10pF typical
CMTI 100kV/us minimum
Operating Temperature -40°C to +105°C
Package SMD16
Dimensions 19.9 x 16.9 x 7.5mm
Efficiency Up to 80%
Safety Standards UL 62368-1, EN 62368-1, UL 61800-5-1
MTBF >1,000,000 hours

Applications

SiC MOSFET gate driver power supply

Motor drive and control systems

High-frequency inverters

Electronic system design

EV motor drives

Motor drive and control systems

High-efficiency power supplies

Electronic system design

Renewable energy systems

Renewable energy systems

Traction inverters

Electronic system design

Documents & Resources

FAE Expert Insights

F

"Based on extensive field experience, this product delivers excellent performance across various operating conditions. The design incorporates proven architecture with robust protection features. Customers consistently report high satisfaction with reliability and ease of integration."

— Field Application Engineer, BeiLuo

Frequently Asked Questions

What makes QA-R4G0315T suitable for SiC MOSFETs vs IGBTs?

QA-R4G0315T SiC optimization features: Higher isolation voltage - 6000V vs 3000V for IGBT supplies. SiC systems often operate at higher voltages (800V+ in EVs). Reinforced insulation meets stringent safety requirements for high-voltage systems. Continuous working voltage - 2000V continuous rating for high-voltage operation. Lower isolation capacitance - 10pF vs 15pF typical. Critical for high dv/dt applications. Higher CMTI - 100kV/us vs 15kV/us for IGBT supplies. Essential for SiC switching speeds (dv/dt up to 100V/ns). Optimized output voltage - +15V/-4V vs +15V/-8V for IGBTs. SiC MOSFETs have lower threshold voltage (1-3V vs 4-6V for IGBTs). -4V is sufficient for SiC turn-off and noise immunity.

Use QA-R4G0315T for SiC MOSFETs and high-voltage applications. Use QA151C3 for standard IGBT applications to optimize cost.

SiC MOSFET SiC vs IGBT high dv/dt
What safety certifications does QA-R4G0315T have?

QA-R4G0315T safety certifications: UL 62368-1 - North American safety standard for audio/video and IT equipment. EN 62368-1 - European safety standard. IEC 62368-1 - International safety standard. UL 61800-5-1 - Adjustable speed electrical power drive systems. EN 61800-5-1 - European equivalent. Reinforced insulation - certified for reinforced (double) insulation. 6000V working voltage - certified for 6000V DC working voltage. System voltage - suitable for systems up to 1000V AC or 1500V DC.

Comprehensive safety certifications for global acceptance. Contact us for certification documentation.

safety certifications UL certification IEC certification
Can this supply handle the high dv/dt of SiC devices?

Yes, the QA-R4G0315T is specifically designed to handle the extreme dv/dt of SiC MOSFETs. With 100kV/us CMTI rating, it can withstand the fastest switching transients without malfunction. The 10pF isolation capacitance minimizes common-mode current coupling. This has been verified in EV traction inverter applications with dv/dt up to 50-100kV/us.

100kV/us CMTI rating is sufficient for all SiC applications. Verified in automotive and industrial applications.

dv/dt CMTI SiC switching
What is the difference between basic and reinforced isolation?

Basic isolation provides single layer of insulation rated for working voltage. Reinforced isolation provides equivalent of two layers of basic insulation with higher safety margin. QA-R4G0315T has reinforced isolation rated for 6000V working voltage and 2000V continuous. Reinforced isolation is required for medical equipment with patient contact, EV applications, and high-reliability industrial systems. It provides better long-term reliability and safety margin.

Use reinforced isolation for medical, EV, and high-reliability applications. Basic isolation is sufficient for standard industrial.

reinforced isolation basic isolation safety rating
How do I layout the PCB for this supply?

PCB layout guidelines: Maintain >8mm creepage and >5mm clearance for reinforced isolation. Use slots or barriers to increase creepage distance. Keep input side (5V, control ground) well separated from output side (+15V/-4V, power ground). Place input capacitor close to pins 1-2. Place output capacitors close to pins 7-8, 9-10. Minimize loop area of output connections. Keep supply away from magnetic components. Use 4-layer PCB with dedicated ground planes. Follow UL/IEC spacing requirements for reinforced insulation.

Follow manufacturer layout guidelines and safety spacing requirements. Contact our FAE team for layout review.

PCB layout creepage clearance isolation