IV2D12030T3
Second generation 1200V 30mΩ SiC MOSFET with improved performance
Product Overview
Description
The IV2D12030T3 is a second-generation 1200V SiC MOSFET featuring trench technology for improved performance. With 30mΩ Rds(on), this device offers an excellent balance of conduction and switching losses.
The Gen2 trench technology provides better channel mobility and reduced on-resistance compared to planar devices. This results in lower conduction losses and improved overall efficiency.
The device is suitable for a wide range of applications including EV traction inverters, solar inverters, and industrial motor drives where high efficiency is critical.
Product Series
IV
Primary Application
EV traction inverters
Key Features
- Gen2 trench technology
- 30mΩ low on-resistance
- Improved switching performance
- Low gate charge
- High temperature operation
- AEC-Q101 qualified
Specifications
| Voltage Rating | 1200V |
|---|---|
| Current Rating | 100A (continuous) |
| Rds(on) | 30mΩ (typical at 25°C) |
| Package | TO-247-3 |
| Temperature Range | -55°C to +175°C |
| Qg | 125nC (typical) |
| Ciss | 2800pF |
| Coss | 195pF |
| Crss | 32pF |
Applications
EV traction inverters
Automotive and EV electronics
Solar inverters
Renewable energy systems
Industrial motor drives
Motor drive and control systems
High-power DC-DC converters
Power conversion and supply
UPS systems
Electronic system design
FAE Expert Insights
"The IV2D12030T3 with Gen2 trench technology is InventChip's latest advancement. The 30mΩ Rds(on) hits a sweet spot for many EV applications. The improved trench technology provides better performance than planar devices at a competitive price. This is becoming a popular choice for next-generation EV inverter designs."
Gen2 trench technology for improved performance
— Li Wei, BeiLuo
Frequently Asked Questions
What is the difference between Gen1 and Gen2 InventChip devices?
Gen2 devices use trench gate technology vs planar for Gen1. Benefits: (1) Lower Rds(on) for same die size. (2) Better channel mobility. (3) Improved switching performance. (4) Lower gate charge. (5) Better figure-of-merit. Gen2 is recommended for new designs requiring best performance.
Choose Gen2 for best performance; Gen1 for cost optimization.