IV1D12040T3
1200V 40mΩ SiC MOSFET in TO-247-3 package for high-power applications
Product Overview
Description
The IV1D12040T3 is a 1200V, 40mΩ SiC MOSFET designed for high-power applications requiring excellent switching performance and low conduction losses. This device features planar SiC technology with robust gate oxide reliability.
With a typical on-resistance of 40mΩ at 25°C, this MOSFET delivers excellent conduction performance while maintaining fast switching characteristics. The device is suitable for 800V EV traction inverters, solar inverters, and industrial power supplies.
The TO-247-3 package provides excellent thermal performance and is compatible with standard mounting hardware. The device is fully AEC-Q101 qualified for automotive applications.
Product Series
IV
Primary Application
EV traction inverters (800V systems)
Key Features
- 1200V breakdown voltage for 800V systems
- 40mΩ low on-resistance
- Fast switching with low switching losses
- AEC-Q101 automotive qualified
- TO-247-3 package for easy mounting
- High temperature operation to 175°C
Specifications
| Voltage Rating | 1200V |
|---|---|
| Current Rating | 77A (continuous) |
| Rds(on) | 40mΩ (typical at 25°C) |
| Package | TO-247-3 |
| Temperature Range | -55°C to +175°C |
| Qg | 105nC (typical) |
| Ciss | 2150pF |
| Coss | 155pF |
| Crss | 25pF |
Applications
EV traction inverters (800V systems)
Automotive and EV electronics
Solar inverters
Renewable energy systems
Industrial motor drives
Motor drive and control systems
High-power DC-DC converters
Power conversion and supply
Welding equipment
Electronic system design
FAE Expert Insights
"The IV1D12040T3 is our most popular 1200V device for EV applications. Customers consistently achieve 98%+ inverter efficiency with this device. The 40mΩ Rds(on) provides an excellent balance of conduction and switching losses. For 800V EV traction inverters, this is the go-to device. The AEC-Q101 qualification and competitive pricing make it ideal for automotive applications."
Best-selling 1200V device for EV traction inverters
— Li Wei, BeiLuo
Frequently Asked Questions
What is the typical gate drive voltage for IV1D12040T3?
Recommended gate drive: +18V for turn-on and -5V for turn-off. This provides optimal switching performance and noise immunity. The gate threshold voltage is typically 2.5V. Use a gate resistor of 5-10Ω to control switching speed and EMI.
Use +18V/-5V gate drive with 5-10Ω gate resistor for optimal performance.
How do I calculate switching losses for IV1D12040T3?
Switching losses = Eon × fsw + Eoff × fsw. At 800V/40A: Eon ≈ 1.2mJ, Eoff ≈ 0.8mJ. For 50kHz switching: Psw = (1.2+0.8)mJ × 50kHz = 100W. Conduction loss: Pcond = I² × Rds(on) × duty cycle. Total losses = Psw + Pcond. Use thermal calculator for junction temperature.
Use loss calculator tools or contact FAE for detailed analysis.