IVM12040HB

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1200V half-bridge SiC power module with 40mΩ MOSFETs

Product Overview

Description

The IVM12040HB is a 1200V half-bridge SiC power module featuring two 40mΩ SiC MOSFETs in a compact, low-inductance package. This module is ideal for EV traction inverters and high-power motor drives.

The module integrates high-performance SiC MOSFETs with optimized internal layout to minimize parasitic inductance. This enables fast switching with low overshoot and reduced EMI.

The standard package footprint allows for easy integration into existing designs. The module is fully tested and characterized for reliable operation.

Product Series

IVM

Primary Application

EV traction inverters

Key Features

  • Half-bridge configuration
  • 40mΩ SiC MOSFETs
  • Low parasitic inductance
  • Integrated NTC thermistor
  • Standard footprint
  • Pre-tested and characterized

Specifications

Configuration Half-Bridge
Voltage Rating 1200V
Rds(on) 40mΩ per switch
Current Rating 200A (module)
Package Standard Module
Temperature Range -40°C to +150°C

Applications

EV traction inverters

Automotive and EV electronics

High-power motor drives

Motor drive and control systems

Solar inverters

Renewable energy systems

Energy storage systems

Renewable energy systems

Documents & Resources

FAE Expert Insights

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"The IVM12040HB module simplifies EV traction inverter design by integrating two switches with optimized layout. The low inductance design enables clean switching waveforms. Customers appreciate the pre-tested modules that reduce development time. Contact FAE for module application support and thermal design guidelines."

Integrated half-bridge for simplified inverter design

— Li Wei, BeiLuo

Frequently Asked Questions

What is the advantage of using a module vs discrete devices?

Module advantages: (1) Lower parasitic inductance - better switching. (2) Pre-tested - known good. (3) Thermal management - optimized design. (4) Assembly - fewer components. (5) Reliability - qualified module. Discrete advantages: (1) Flexibility - individual device replacement. (2) Cost - lower for high volume. (3) Layout - customizable. Choose based on volume and design requirements.

Use modules for >50kW; discrete for <50kW or high volume.

module vs discrete parasitic inductance design choice