Infineon Technologies IGBT Modules

Understanding IGBT module parameters is crucial for proper selection: Collector-Emitter Voltage (Vce) - Must exceed your DC bus voltage with safety margin (typically 1.5-2x)

Collector Current (Ic) - Choose based on RMS current with 1.5-2x derating for reliability

Vce(sat) - Lower values mean lower conduction losses but may trade off switching speed

Switching Energy (Eon/Eoff) - Determines switching losses at your operating frequency

Package Type - EconoDUAL for standard drives, PrimePACK for high power

Temperature Range - Industrial (-40°C to +150°C) or extended ratings. Our product tables show all these parameters with typical values at 25°C. For detailed characterization curves, refer to the datasheet or contact our FAE team for application-specific guidance.

Click on any specific model in the table to view detailed specifications, or contact us for selection assistance based on your application requirements.

EconoDUAL and PrimePACK serve different power ranges and applications: EconoDUAL - Industry-standard package for industrial motor drives (5-200kW), current ratings 50A-600A, voltage ratings 650V-1700V, compact design with screw terminals, ideal for general-purpose inverters, pumps, fans, and conveyor systems. PrimePACK - High-power package for renewable energy and traction (200kW+), current ratings 600A-3600A, voltage ratings 1200V-1700V, optimized thermal design with low inductance, designed for wind turbines, solar central inverters, and rail transit. EconoDUAL offers cost-effective solutions for standard industrial applications, while PrimePACK provides maximum power density for demanding high-power systems.

Compare specific EconoDUAL and PrimePACK models in the table below to find the optimal package for your power and application requirements.

Total IGBT power losses consist of conduction losses and switching losses: Conduction Losses = Vce(sat) × Ic × Duty Cycle. Use the Vce(sat) value from the table at your operating current and junction temperature. Switching Losses = (Eon + Eoff) × Switching Frequency. Eon and Eoff values are provided in the datasheet at specific test conditions. Total Losses = Conduction Losses + Switching Losses. Thermal Considerations - Multiply total losses by thermal resistance (Rth) to calculate temperature rise. Ensure junction temperature stays below maximum rating (typically 150°C) with adequate margin. For high-frequency applications (>10kHz), switching losses dominate

for low-frequency/high-current applications, conduction losses are more significant. Our FAE team can provide detailed loss calculations for your specific operating conditions.

Select an IGBT module from the table with adequate current rating and low Vce(sat) for your efficiency requirements, or request a detailed loss analysis from our technical team.

Infineon IGBT part numbers follow a systematic coding: FF (First Letters) - FF indicates a six-pack (three-phase) module, FS indicates a chopper module, FZ indicates a dual module

300/600 (Numbers) - Nominal current rating in Amperes

R (Letter) - Indicates the generation (R=IGBT4, S=IGBT5)

12 (Numbers) - Voltage rating in hundreds of volts (12=1200V)

ME4 (Letters) - Specific chip technology and package variant

_B11 (Suffix) - Package and configuration details. For example, FF300R12ME4_B11 is a 300A, 1200V, six-pack IGBT4 module in EconoDUAL 3 package. Understanding these codes helps identify compatible replacements and alternative ratings. Contact us if you need help interpreting part numbers or finding cross-references.

Use the part number decoder above to understand specifications, or click on any part number in the table to view complete details and datasheets.

Voltage rating selection depends on your DC bus voltage and safety margins: 650V IGBTs - For 230-400VAC applications with DC bus up to 400V, typical in small motor drives, pumps, and HVAC systems

1200V IGBTs - For 380-480VAC industrial applications with DC bus up to 600-700V, most common for general-purpose drives and inverters

1700V IGBTs - For 690VAC applications or high-voltage DC bus up to 1000V, used in large drives, renewable energy, and traction. Safety Margin - Select Vce rating at least 1.5-2x your maximum DC bus voltage to account for voltage spikes and transients. Overvoltage spikes during switching can exceed DC bus voltage by 20-30%, so adequate voltage margin is essential for reliable operation.

Filter the table by voltage rating using the dropdown above, or contact our technical team for voltage selection guidance based on your specific application.

Proper thermal management is critical for IGBT reliability: Thermal Resistance (Rth) - Listed in the table as Rth(j-c) junction-to-case and Rth(c-s) case-to-heatsink

calculate total thermal resistance for your cooling system. Maximum Junction Temperature - Typically 150°C (175°C for some models)

operate below 125°C for long-term reliability. Heat Sink Selection - Size based on total power losses and maximum allowable temperature rise. Thermal Interface Material - Use high-quality thermal grease or phase-change materials between module and heatsink. Mounting Torque - Follow specified torque values for screws to ensure proper thermal contact without damaging the module. Forced Air vs. Liquid Cooling - High-power modules (>300A) typically require liquid cooling or substantial heatsinks with forced air. Our FAE team can assist with thermal calculations and cooling system design.

Review thermal specifications in the table, then click on specific models for detailed thermal data and mounting guidelines.

Yes, IGBT modules can be paralleled for higher current, but careful design is required: Current Sharing - Use modules with positive temperature coefficient (most modern IGBTs) so current naturally balances as devices heat up. Gate Drive - Use identical gate drivers with matched propagation delays

connect gates through individual resistors to prevent oscillation. Symmetrical Layout - Ensure equal trace lengths and impedances for all parallel devices to balance switching. Derating - Parallel 20-30% more devices than theoretically required to account for current imbalance. Temperature Sensing - Monitor each module individually as they may operate at different temperatures. Infineon's EconoDUAL and PrimePACK modules are designed for parallel operation with matched characteristics. Contact our FAE team for detailed parallel connection guidelines and design review.

Select IGBT modules from the table with appropriate current ratings for your parallel configuration, or contact us for parallel design assistance.

IGBT4 and IGBT5 is different generations of Infineon IGBT technology: IGBT4 (Current Generation) - Trench/field-stop technology offering excellent trade-off between conduction and switching losses, widely used in industrial drives and renewable energy, proven reliability with millions of units in the field. IGBT5 (Latest Generation) - Advanced trench-gate field-stop technology with optimized cell design, lower Vce(sat) for reduced conduction losses, improved switching softness reducing EMI, higher power density enabling smaller packages. Selection Guidance - IGBT4 offers proven performance and broad availability for most applications

IGBT5 provides best-in-class efficiency for new designs where maximum performance is required. Both technologies are available in EconoDUAL and PrimePACK packages. Check the part number suffix to identify the technology generation.

Compare IGBT4 and IGBT5 models in the table to evaluate the performance benefits for your specific application requirements.

Switching energy parameters indicate dynamic losses during turn-on and turn-off: Eon (Turn-on Energy) - Energy dissipated during IGBT turn-on, includes diode reverse recovery losses in the complementary diode

Eoff (Turn-off Energy) - Energy dissipated during IGBT turn-off, primarily due to current-voltage overlap

Etotal = Eon + Eoff - Total switching energy per pulse. Values in the table are typically measured at rated current, half rated voltage, and 150°C junction temperature. Switching Power Loss = Etotal × Switching Frequency. Lower switching energy enables higher operating frequencies and reduces cooling requirements. Note that switching energy varies with gate resistance, DC bus voltage, and temperature - refer to datasheet curves for detailed characterization.

Select IGBT modules with low switching energy for high-frequency applications, or contact us for switching loss calculations at your specific operating conditions.

Infineon IGBT modules include several integrated protection features: NTC Temperature Sensor - Integrated thermistor for temperature monitoring and over-temperature protection, resistance value provided in datasheet

Isolation Voltage - 2500V AC (1 minute) or 4000V AC isolation between power terminals and baseplate for safety

Press-Fit Contacts - Reliable connection technology in some packages eliminating soldering

Low Inductance Design - Optimized internal layout reduces voltage overshoot during switching

Short-Circuit Ruggedness - IGBTs rated for 10μs short-circuit withstand time at rated voltage. External Protection Required - Gate drivers must provide desaturation detection, under-voltage lockout (UVLO), and soft shutdown. The combination of integrated features and proper external protection ensures reliable operation in demanding applications.

Review protection features for each model in the table, then click for detailed specifications and recommended gate driver pairings.

Gate driver selection criteria for IGBT modules: Isolation Voltage - Must exceed DC bus voltage with margin (1200V isolation for 600V bus)

Peak Output Current - 2A minimum for modules up to 300A, 4A+ for larger modules to ensure fast switching

Propagation Delay - Matched delays for parallel operation, typically <200ns

Protection Features - Desaturation detection for short-circuit protection, UVLO for safe startup, soft shutdown for fault conditions

Package - DSO-20 for standard isolation, larger packages for reinforced isolation. Recommended Pairings - EconoDUAL modules: 1ED020I12-F2 (2A, 1200V isolation)

PrimePACK modules: 2ED020I12-F2 dual driver or 1EDI20I12-AF reinforced isolation. Our product tables show recommended gate drivers for each IGBT module, or contact our FAE team for detailed pairing recommendations.

Click on any IGBT module in the table to see recommended gate drivers, or browse the Gate Drivers category for compatible options.