guides
SiC MOSFET Gate Drive Design Guide
Proper gate drive design is critical for SiC MOSFET performance. This guide covers key considerations for GeneSiC devices.
Gate voltage: Use +15V to +20V for turn-on and -3V to -5V for turn-off. Higher positive voltage reduces on-resistance.
Gate resistance: Select based on switching speed vs EMI trade-off. Typical values are 5-20Ω for turn-on and turn-off.
Kelvin connection: Always use Kelvin source connection for high-frequency switching to avoid source inductance issues.
Frequently Asked Questions
1. What gate voltage should I use for GeneSiC SiC MOSFETs?
Recommended gate voltage is +18V for turn-on and -3V for turn-off. This provides optimal on-resistance while preventing false turn-on.
💡 Decision Guide: Use +18V/-3V gate drive for best performance. Contact FAE for specific recommendations.