GeneSiC Semiconductor Products

GeneSiC offers four main product categories: SiC MOSFETs featuring trench-gate technology with voltage ratings from 650V to 3300V for high-power applications; SiC Schottky Diodes with zero reverse recovery for high-efficiency rectification; GaN HEMTs for ultra-high-frequency switching up to several MHz; and Power Modules integrating multiple SiC devices for complete power conversion solutions. Each category covers a wide range of voltage and current ratings to meet diverse application requirements.

Browse our product categories below or contact our FAE team for selection guidance.

SiC vs GaN selection criteria: (1) Power level - SiC preferred for >10kW, GaN for <10kW. (2) Frequency - GaN excels at >500kHz, SiC at 50-200kHz. (3) Voltage - SiC available to 3300V, GaN typically <650V. (4) Applications - SiC for EV, solar, industrial; GaN for aerospace, telecom. (5) Ruggedness - SiC more rugged for harsh environments. (6) Maturity - SiC more mature for high-voltage. (7) Support - Both have excellent design resources. Choose based on your specific power, frequency, and voltage requirements.

Use SiC for high-power high-voltage; GaN for high-frequency compact designs.

GeneSiC SiC device advantages: (1) High voltage - Industry-leading 3300V rating. (2) Trench-gate - Proprietary technology for low Rds(on). (3) Ruggedness - Enhanced short-circuit capability. (4) Temperature - 200°C junction temperature. (5) Aerospace - AS9100 and radiation-tolerant options. (6) Reliability - Proven in extreme environments. (7) Support - Comprehensive design resources. GeneSiC combines cutting-edge performance with extreme reliability.

Choose GeneSiC for highest voltage ratings and aerospace-grade reliability.