SC30N1200
30A 1200V SiC MOSFET for high-efficiency EV and solar applications with ultra-low switching losses.
Product Overview
Description
The SC30N1200 is a high-performance SiC MOSFET designed for high-efficiency power conversion applications.
With 1200V rating and 30A current capability, this SiC device enables compact and efficient designs for EV and solar.
The ultra-low switching losses and fast body diode enable high-frequency operation with minimal losses.
Product Series
SC
Primary Application
EV traction inverters
Key Features
- 1200V rating for 800V EV and solar systems
- Ultra-low switching losses for high efficiency
- Fast body diode for synchronous rectification
- High junction temperature rating
- Low gate charge for easy driving
- RoHS compliant
Specifications
| Voltage Rating | 1200V |
|---|---|
| Current Rating | 30A |
| RDS(on) | 80mΩ typical @ 18V |
| Eon+Eoff | 2.5mJ @ 800V/15A |
| Package | TO-247-3 |
| Junction Temperature | -55°C to +175°C |
| Body Diode Recovery | Very fast, low Qrr |
Applications
EV traction inverters
Automotive and EV electronics
Solar inverter main stage
Renewable energy systems
High-efficiency server power
Electronic system design
Battery chargers
Battery and charging management
DC/DC converters
Power conversion and supply
FAE Expert Insights
"SiC is the future of high-efficiency power conversion, and the SC30N1200 is excellent value for 800V applications. I've designed several EV chargers using this device where the switching losses are dramatically lower than silicon IGBTs. At 20kHz, the efficiency improvement is 2-3% compared to IGBTs, which translates to significant thermal management advantages. The body diode performance is surprisingly good - suitable for hard-switched topologies without auxiliary diodes in many cases. The gate drive requirements are similar to silicon MOSFETs, making migration from silicon relatively straightforward. I recommend 0-18V gate drive with 5-10 ohm gate resistors for optimal performance."
High-performance 1200V SiC MOSFET ideal for 800V EV and solar applications
— Dr. James Liu, BeiLuo
Frequently Asked Questions
What gate drive voltage is required?
The SC30N1200 requires 0V/18V gate drive (enhanced at 18V). The threshold voltage is around 3.5-5V. Never drive above 20V or below -4V. Use dedicated SiC MOSFET gate drivers that can source/sink the required peak currents (typically 5-10A). The gate charge is lower than equivalent silicon MOSFETs, but switching speed requires capable drivers.
Use 0V/18V gate drive with dedicated SiC drivers. Never exceed 20V.