STR-G4401
High-speed dual low-side gate driver with 4A peak output current, suitable for driving power MOSFETs and IGBTs in
Product Overview
Description
The STR-G4401 is a high-speed dual low-side gate driver designed for driving power switches.
It provides 4A peak drive current for fast switching of MOSFETs and IGBTs.
The dual channels can be used independently or together for driving two switches.
Product Series
STR
Primary Application
DC-DC converters
Key Features
- 4A peak drive current per channel
- Fast 15ns switching time
- Low propagation delay
- Excellent delay matching
- Under-voltage lockout (UVLO)
- TTL/CMOS compatible inputs
- Dual independent channels
- Wide operating voltage range
Specifications
| Configuration | Dual Low-Side |
|---|---|
| Peak Output Current | 4A source/sink |
| Operating Voltage | 4.5V to 18V |
| Switching Time | 15ns typical |
| Propagation Delay | 25ns typical |
| Delay Matching | 5ns between channels |
| Package | SOIC-8, MSOP-8 |
| Operating Temperature | -40°C to +125°C |
Applications
DC-DC converters
Power conversion and supply
Motor drives
Motor drive and control systems
Switching power supplies
Electronic system design
Class D amplifiers
Electronic system design
Pulse transformers
Electronic system design
FAE Expert Insights
"The STR-G4401 is a reliable dual gate driver that delivers consistent performance. The 4A drive current is sufficient for most MOSFETs up to medium power levels. I appreciate the fast switching times and good delay matching between channels - important for synchronous rectifier applications. The wide voltage range allows flexibility in drive voltage selection. I've used this driver in numerous DC-DC converter and motor drive designs. For cost-sensitive applications requiring dual channels, this is a solid choice."
Dual 4A channels with fast switching and good matching
— Alex Wang, BeiLuo
Frequently Asked Questions
What gate resistor value should I use?
Gate resistor selection balances switching speed against EMI and ringing. Typical values range from 1Ω to 47Ω. Lower values (1-10Ω) provide fast switching for high-efficiency applications but may cause more ringing. Higher values (22-47Ω) slow switching for reduced EMI but increase switching losses. Start with 10Ω and adjust based on waveform measurements. Some designs use different values for turn-on and turn-off (asymmetric drive) to optimize both characteristics.
Start with 10Ω and optimize based on switching waveforms. Consider asymmetric drive for optimization.
Can I parallel the two channels for higher drive current?
Yes, the two channels of STR-G4401 can be paralleled for 8A peak drive capability. Connect the inputs together and the outputs together. The delay matching specification (5ns) ensures both channels switch simultaneously for effective current sharing. This is useful for driving large MOSFETs or IGBTs with high gate charge. Ensure proper PCB layout for current sharing - keep traces symmetric and minimize inductance.
Can parallel for 8A total. Ensure symmetric layout for current sharing.
What is the difference between source and sink current?
Source current (also called pull-up or turn-on) flows from the driver to the gate to charge the gate capacitance and turn on the MOSFET. Sink current (also called pull-down or turn-off) flows from the gate to the driver to discharge the gate capacitance and turn off the MOSFET. STR-G4401 provides 4A for both source and sink, ensuring fast turn-on and turn-off. Some applications may benefit from different turn-on and turn-off speeds, achieved by using different external gate resistors.
4A source and sink for fast switching. Use different gate resistors for asymmetric switching.
How do I calculate power dissipation in the gate driver?
Gate driver power dissipation comes from charging/discharging gate capacitance: Pd = Qg × Vdrive × fsw, where Qg is total gate charge, Vdrive is gate drive voltage, and fsw is switching frequency. For example, with Qg=50nC, Vdrive=12V, fsw=100kHz: Pd = 50nC × 12V × 100kHz = 60mW per switch. For dual channels: 120mW total. This is typically low, but consider it for thermal calculations in high-frequency applications or when paralleling channels.
Calculate using gate charge, drive voltage, and frequency. Typically low power dissipation.
What is the UVLO threshold and why is it important?
UVLO (Under-Voltage Lockout) prevents the driver from operating when supply voltage is too low to properly enhance the MOSFET. STR-G4401 typically has UVLO thresholds around 4.0V (falling) and 4.5V (rising). If supply voltage drops below threshold, the driver outputs are disabled (pulled low). This prevents the MOSFET from operating in linear mode with high resistance, which would cause excessive heating. UVLO ensures reliable operation and protects the power switch.
UVLO is automatic. Ensure supply voltage stays above UVLO threshold during operation.
Can STR-G4401 drive IGBTs as well as MOSFETs?
Yes, STR-G4401 can drive both MOSFETs and IGBTs. The 4A drive current and 18V maximum drive voltage are suitable for most IGBT modules. For IGBTs, ensure the drive voltage is appropriate (typically +15V for turn-on, 0V or -5 to -8V for turn-off). The negative turn-off voltage helps prevent false turn-on due to dV/dt. The driver features are compatible with both device types. Consider the specific IGBT's gate charge and switching requirements.
Suitable for both MOSFETs and IGBTs. Adjust drive voltage for IGBT requirements.