GDM300N60
60V 300A MOSFET module with 1.2mΩ RDS(on), ideal for ultra-high current applications.
Product Overview
Description
60V 300A MOSFET module with 1.2mΩ RDS(on). Advanced trench technology for high-efficiency switching.
EasyPACK package with excellent thermal performance and low parasitic inductance. Supports switching up to 100kHz.
In stock for ultra-high current applications. FAE support for gate drive and thermal design.
Product Series
60V
Primary Application
Key Features
- Advanced trench MOSFET with 1.2mΩ RDS(on) at 25°C
- Low gate charge Qg = 250nC for fast switching
- Ultra-high current capability: 300A continuous at 25°C case
- EasyPACK package with RthJC = 0.4K/W
- Fast switching: tr = 30ns, tf = 18ns typical
- Low parasitic inductance for clean switching
Specifications
| Voltage | 60V |
|---|---|
| Current | 300A |
| Rds On | 1.2mΩ |
| Qg | 250nC |
| Package | EasyPACK |
| Stock | In Stock |
| Slug | gdm300n60 |
Applications
High-current DC-DC converters
Industrial application for
Battery management systems
Industrial application for
Power distribution
Industrial application for
48V mild hybrid systems
Industrial application for
Energy storage
Industrial application for
FAE Expert Insights
"GDM300N60 is Starpower's ultra-high current MOSFET module, delivering exceptional performance for demanding applications like 48V mild hybrid systems and high-power battery management. The 1.2mΩ RDS(on) provides excellent efficiency even at 300A, and the EasyPACK package handles the thermal requirements well. Customers appreciate the module's ability to replace multiple paralleled discrete MOSFETs with a single, reliable solution."
Excellent for ultra-high current
— Senior FAE, BeiLuo
Frequently Asked Questions
What is the recommended gate drive voltage for GDM300N60?
GDM300N60 is optimized for 10V gate drive (VGS = 10V) where it achieves the specified 1.2mΩ RDS(on). The MOSFET can also operate with 4.5V gate drive for compatibility with logic-level drivers, though RDS(on) increases to approximately 1.8mΩ. The gate threshold voltage VGS(th) is typically 2.8V. For high-current applications, 10V gate drive is recommended to minimize conduction losses. The gate drive circuit should provide fast rise/fall times to minimize switching losses. Gate resistor values of 1-3Ω are typical for this high-current module.
Contact our FAE team for gate driver IC recommendations and gate drive circuit design.
What is the thermal resistance of GDM300N60?
GDM300N60 in EasyPACK package has the following thermal characteristics: (1) Junction-to-case thermal resistance RthJC = 0.4K/W. (2) Maximum junction temperature Tj(max) = 175°C. (3) Recommended operating junction temperature Tj(op) = -40°C to +150°C. For continuous operation at 300A with 1.2mΩ RDS(on), the conduction loss is 108W, requiring a heatsink with thermal resistance of approximately 0.3K/W or better to maintain junction temperature below 125°C at 40°C ambient. Forced air cooling or liquid cooling is typically required for continuous operation at full current.
Contact our FAE team for thermal simulation and cooling system design.
Can GDM300N60 be used for 48V mild hybrid systems?
Yes, GDM300N60 is ideal for 48V mild hybrid systems. Its characteristics make it perfect for this demanding application: (1) 60V rating provides adequate margin for 48V nominal systems (max 60V during charging). (2) 300A current rating supports high-power battery switches and DC-DC converters for 48V systems up to 15kW. (3) Ultra-low RDS(on) of 1.2mΩ minimizes conduction losses and heating. (4) Fast switching enables efficient DC-DC conversion. (5) EasyPACK package provides reliable mounting and thermal management. (6) Low gate charge allows fast switching for protection functions. The module is widely used in 48V mild hybrid power distribution systems.
Contact our FAE team for 48V mild hybrid design support and BMS recommendations.
What is the switching performance of GDM300N60?
GDM300N60 offers excellent switching performance for ultra-high current applications: (1) Turn-on time tr = 30ns typical with proper gate drive. (2) Turn-off time tf = 18ns typical. (3) Gate charge Qg = 250nC at VGS = 10V. (4) Input capacitance Ciss = 18nF typical. (5) Output capacitance Coss = 4nF typical. (6) Reverse transfer capacitance Crss = 1.2nF typical. These characteristics enable switching frequencies up to 100kHz with reasonable switching losses. The low parasitic inductance of the EasyPACK package minimizes voltage overshoot during switching.
Contact our FAE team for switching performance analysis and optimization.
How does GDM300N60 compare to GDM200N60?
GDM300N60 and GDM200N60 serve different current requirements: (1) GDM300N60 (300A, 1.2mΩ) is designed for ultra-high current applications requiring maximum current handling. (2) GDM200N60 (200A, 1.8mΩ) is for high-current applications with lower current requirements. GDM300N60 has lower RDS(on) but higher gate charge. Both use the same EasyPACK package but GDM300N60 requires more sophisticated cooling due to higher power dissipation. Selection depends on current requirements and cooling capabilities. For currents above 250A, GDM300N60 is the recommended choice.
Contact our FAE team for MOSFET module selection based on your current and thermal requirements.
What are the layout considerations for GDM300N60?
GDM300N60 requires careful PCB layout due to ultra-high current: (1) Use wide, short traces for drain and source connections to minimize resistance and inductance. (2) Use copper busbars or multiple PCB layers for current paths. (3) Place decoupling capacitors very close to module terminals. (4) Use Kelvin source connection for gate drive to avoid source inductance feedback. (5) Implement proper thermal vias under the module for heat dissipation. (6) Use sufficient copper thickness (2oz or more) for high current paths. Starpower provides detailed layout guidelines for ultra-high current applications.
Contact our FAE team for PCB layout review and optimization recommendations.