GDM150N100
100V 150A MOSFET module with 4.5mΩ RDS(on), ideal for 72V EV auxiliary systems.
Product Overview
Description
100V 150A MOSFET module with 4.5mΩ RDS(on). Advanced trench technology for high-efficiency switching.
EasyPACK package with excellent thermal performance and low parasitic inductance. Supports switching up to 100kHz.
In stock for 72V EV and industrial applications. FAE support for gate drive and thermal design.
Product Series
100V
Primary Application
Key Features
- Advanced trench MOSFET with 4.5mΩ RDS(on) at 25°C
- Low gate charge Qg = 150nC for fast switching
- High current capability: 150A continuous at 25°C case
- EasyPACK package with RthJC = 0.55K/W
- Fast switching: tr = 22ns, tf = 14ns typical
- Low parasitic inductance for clean switching
Specifications
| Voltage | 100V |
|---|---|
| Current | 150A |
| Rds On | 4.5mΩ |
| Qg | 150nC |
| Package | EasyPACK |
| Stock | In Stock |
| Slug | gdm150n100 |
Applications
72V EV auxiliary systems
Industrial application for
Industrial DC-DC converters
Industrial application for
Motor drives
Industrial application for
Power distribution
Industrial application for
Battery management
Industrial application for
FAE Expert Insights
"GDM150N100 is an excellent choice for 72V EV auxiliary systems and industrial applications. The 100V rating provides good margin for 72V systems, and the 150A current capability handles demanding loads like HVAC compressors. Customers appreciate the module's automotive qualification and proven reliability in harsh environments. The balance of performance and cost makes it a popular choice for volume production."
Ideal for 72V EV auxiliary
— Senior FAE, BeiLuo
Frequently Asked Questions
What is the recommended gate drive voltage for GDM150N100?
GDM150N100 is optimized for 10V gate drive (VGS = 10V) where it achieves the specified 4.5mΩ RDS(on). The MOSFET can also operate with 4.5V gate drive for compatibility with logic-level drivers, though RDS(on) increases to approximately 7mΩ. The gate threshold voltage VGS(th) is typically 2.4V. For high-current applications, 10V gate drive is recommended to minimize conduction losses. The gate drive circuit should provide fast rise/fall times to minimize switching losses. Gate resistor values of 2-5Ω are typical for this module.
Contact our FAE team for gate driver IC recommendations and gate drive circuit design.
What is the thermal resistance of GDM150N100?
GDM150N100 in EasyPACK package has the following thermal characteristics: (1) Junction-to-case thermal resistance RthJC = 0.55K/W. (2) Maximum junction temperature Tj(max) = 175°C. (3) Recommended operating junction temperature Tj(op) = -40°C to +150°C. For continuous operation at 150A with 4.5mΩ RDS(on), the conduction loss is 101W, requiring a heatsink with thermal resistance of approximately 0.4K/W or better to maintain junction temperature below 125°C at 40°C ambient. Forced air cooling is recommended for continuous operation at full current.
Contact our FAE team for thermal simulation and heatsink selection guidance.
Can GDM150N100 be used for 72V EV auxiliary systems?
Yes, GDM150N100 is well-suited for 72V EV auxiliary systems. Its characteristics make it ideal for this application: (1) 100V rating provides adequate margin for 72V nominal systems with voltage transients. (2) 150A current rating supports high-power auxiliary drives such as HVAC compressors, power steering, and cooling pumps. (3) Low RDS(on) minimizes conduction losses for battery efficiency. (4) Fast switching allows PWM frequencies up to 20kHz for quiet operation. (5) Rugged EasyPACK package withstands automotive vibration and temperature cycling. (6) AEC-Q101 qualified versions available for automotive applications.
Contact our FAE team for 72V EV auxiliary system design support and automotive qualification data.
What is the switching performance of GDM150N100?
GDM150N100 offers excellent switching performance: (1) Turn-on time tr = 22ns typical with proper gate drive. (2) Turn-off time tf = 14ns typical. (3) Gate charge Qg = 150nC at VGS = 10V. (4) Input capacitance Ciss = 10nF typical. (5) Output capacitance Coss = 2.2nF typical. (6) Reverse transfer capacitance Crss = 0.7nF typical. These characteristics enable switching frequencies up to 100kHz. The lower gate charge compared to GDM300N60 allows faster switching with less gate driver power, making it suitable for high-frequency applications.
Contact our FAE team for switching performance analysis and frequency optimization.
How does GDM150N100 compare to GDM100N80?
GDM150N100 and GDM100N80 serve different voltage and current requirements: (1) GDM150N100 (100V, 150A, 4.5mΩ) is designed for 72V systems with higher current capability. (2) GDM100N80 (80V, 150A, 3.2mΩ) is for 48-60V systems with lower RDS(on). GDM150N100 has higher voltage rating but slightly higher RDS(on). GDM100N80 offers lower RDS(on) for the same current but lower voltage margin. Selection depends on system voltage and current requirements. Both use the same EasyPACK package and have similar thermal performance.
Contact our FAE team for MOSFET module selection based on your voltage and current requirements.
What protection features are recommended for GDM150N100 applications?
Recommended protection features for GDM150N100 applications: (1) Overcurrent protection - current sensing with fast shutdown (<1μs) for short-circuit protection. (2) Over-temperature protection - NTC thermistor monitoring with shutdown at 125-150°C. (3) Overvoltage protection - TVS diodes or active clamping for voltage transients. (4) Undervoltage lockout - prevent operation with insufficient gate drive voltage. (5) Shoot-through protection - dead-time control and cross-conduction prevention in bridge configurations. (6) Soft-start - current limiting during startup to prevent inrush current. Starpower provides recommended protection circuit designs.
Contact our FAE team for protection circuit design and component recommendations.