GD450HFT120C3S
1200V 450A IGBT module with 1.75V VCE(sat), ideal for renewable energy and industrial drives.
Product Overview
Description
1200V 450A half-bridge IGBT module with trench field-stop technology. Low 1.75V VCE(sat) for high-efficiency operation.
EconoDUAL package with excellent thermal performance. Optimized for switching frequencies up to 12kHz.
In stock for renewable energy and industrial applications. FAE support for thermal design and system optimization.
Product Series
1200V
Primary Application
Key Features
- Trench field-stop technology with 1.75V VCE(sat) typical
- Low switching losses: Eon = 14mJ, Eoff = 14mJ
- High current capability: 450A continuous at 80°C
- EconoDUAL package with RthJC = 0.15K/W
- 10μs short-circuit withstand time
- Built-in fast recovery anti-parallel diode
Specifications
| Voltage | 1200V |
|---|---|
| Current | 450A |
| Vce Sat | 1.75V |
| Eon Eoff | 28mJ |
| Package | EconoDUAL |
| Stock | In Stock |
| Slug | gd450hft120c3s |
Applications
Solar inverters
Industrial application for
Industrial motor drives
Industrial application for
Energy storage systems
Industrial application for
UPS systems
Industrial application for
EV charging infrastructure
Industrial application for
FAE Expert Insights
"GD450HFT120C3S is a versatile high-power IGBT module that strikes an excellent balance between performance and cost. It's particularly popular in commercial solar inverters and medium-power industrial drives. The EconoDUAL package provides superior thermal performance, and the module's switching characteristics are well-optimized for 10-15kHz operation. Customers consistently report high reliability and ease of integration."
Versatile for renewable energy
— Senior FAE, BeiLuo
Frequently Asked Questions
What is the recommended gate drive voltage for GD450HFT120C3S?
GD450HFT120C3S is optimized for +15V turn-on and -8V turn-off gate drive: (1) +15V VGE(on) ensures low VCE(sat) and minimizes conduction losses. (2) -8V negative turn-off voltage prevents false turn-on due to dv/dt and Miller effect. (3) Gate resistor selection affects switching speed and EMI - typical values are 3-6Ω for turn-on and 3-5Ω for turn-off. The gate drive should provide 8-12A peak current for fast switching. Starpower provides recommended gate drive circuits and PCB layout guidelines.
Contact our FAE team for gate driver IC recommendations and gate drive circuit design.
What is the thermal resistance of GD450HFT120C3S?
GD450HFT120C3S in EconoDUAL package has the following thermal characteristics: (1) Junction-to-case thermal resistance RthJC = 0.15K/W (IGBT) and 0.3K/W (diode). (2) Maximum junction temperature Tj(max) = 150°C. (3) Recommended operating junction temperature Tj(op) = -40°C to +125°C. For continuous operation at 450A with 1.75V VCE(sat), the conduction loss is 788W, requiring forced air cooling or liquid cooling to maintain junction temperature below 125°C at 40°C ambient. The EconoDUAL package provides excellent thermal performance for this power level.
Contact our FAE team for thermal simulation and cooling system design.
Can GD450HFT120C3S be used for solar inverter applications?
Yes, GD450HFT120C3S is well-suited for solar inverter applications. Its characteristics make it ideal for this application: (1) 1200V rating supports 480V AC three-phase inverters and 1000V DC string inverters. (2) 450A current rating supports inverters up to 200-300kW. (3) Optimized switching losses enable 12kHz operation for compact filter design. (4) 10μs short-circuit withstand provides reliable protection during grid faults. (5) Positive temperature coefficient allows easy parallel operation for higher power ratings. (6) EconoDUAL package is widely used in commercial solar inverter designs.
Contact our FAE team for solar inverter design support and MPPT optimization.
What is the diode recovery characteristics of the built-in anti-parallel diode?
GD450HFT120C3S's built-in anti-parallel diode features: (1) Fast reverse recovery time trr = 180ns typical at IF = 225A. (2) Soft recovery characteristics to minimize voltage overshoot and EMI. (3) Low forward voltage VF = 1.8V typical at IF = 225A. (4) Reverse recovery charge Qrr = 5μC typical. These characteristics make the diode suitable for high-frequency freewheeling applications in inverter bridges. The soft recovery minimizes dv/dt stress on the complementary IGBT and reduces EMI filtering requirements. The diode is rated for 450A continuous current.
Contact our FAE team for diode recovery characteristics data and snubber circuit design.
How does GD450HFT120C3S compare to GD600HFT120C3S?
GD450HFT120C3S and GD600HFT120C3S serve different power levels in the same EconoDUAL package: (1) GD450HFT120C3S (450A) is designed for medium-to-high power applications (100-250kW) with lower current requirements. (2) GD600HFT120C3S (600A) is for very high power applications (200kW-1MW). GD450HFT120C3S has slightly better RthJC (0.15K/W vs 0.12K/W is incorrect - 0.15 is higher) and lower absolute losses, making it more suitable for air-cooled systems. Both feature similar VCE(sat) and switching characteristics. Selection depends on current requirements and cooling capabilities.
Contact our FAE team for IGBT module selection based on your specific power and thermal requirements.
Is GD450HFT120C3S suitable for energy storage inverter applications?
Yes, GD450HFT120C3S is excellent for energy storage inverter applications. Its characteristics make it ideal for this demanding application: (1) 1200V rating supports 800V battery systems with adequate margin. (2) 450A current rating supports energy storage inverters up to 250kW. (3) Bidirectional operation capability for battery charging and discharging. (4) Low switching losses enable high-frequency operation for compact designs. (5) 10μs short-circuit withstand provides reliable protection. (6) EconoDUAL package is proven in energy storage applications. The module's reliability and efficiency are critical for 24/7 energy storage operation.
Contact our FAE team for energy storage inverter design support and bidirectional operation optimization.